Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs IXTT12N150HV

Description
Win Source Part Number: 1382389-IXTT12N150HV Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Package: Tube Standard Package: 30 pcs Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1500 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 890W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT12 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Moisture Sensitivity Level (MSL): 3 (168 Hours)
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Description
Win Source Part Number: 1382389-IXTT12N150HV Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Package: Tube Standard Package: 30 pcs Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1500 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 890W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT12 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Moisture Sensitivity Level (MSL): 3 (168 Hours)
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Suppliers

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Description
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1382389-IXTT12N150HV - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1382389-IXTT12N150HV
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1382389-IXTT12N150HV
Win Source Part Number: 1382389-IXTT12N150HV Category: Discrete Semiconductor Products>Transistors >FETs, MOSFETs>Single FETs, MOSFETs Package: Tube Standard Package: 30 pcs Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1500 V Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 890W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA Supplier Device Package: TO-268AA Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 57 pct. REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT12 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Moisture Sensitivity Level (MSL): 3 (168 Hours)

Win Source Part Number: 1382389-IXTT12N150HV
Category: Discrete Semiconductor Products>Transistors>FETs, MOSFETs>Single FETs, MOSFETs
Package: Tube
Standard Package: 30 pcs
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1500 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 890W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab), TO-268AA
Supplier Device Package: TO-268AA
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3720 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTT12
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Moisture Sensitivity Level (MSL): 3 (168 Hours)

Buy Now Datasheet
Single FETs, MOSFETs - IXTT12N150HV-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTT12N150HV-ND
Single FETs, MOSFETs IXTT12N150HV-ND
N-Channel 1500V 12A (Tc) 890W (Tc) Surface Mount TO-268AA

N-Channel 1500V 12A (Tc) 890W (Tc) Surface Mount TO-268AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT12N150HV - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTT12N150HV
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTT12N150HV
MOSFET N-CH 1500V 12A TO268

MOSFET N-CH 1500V 12A TO268

Supplier's Site
Sheung Wan, Hong Kong
MOSFET DISCMOSFET N-CH STD-HIVOLTAGE

MOSFET DISCMOSFET N-CH STD-HIVOLTAGE

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1382389-IXTT12N150HV IXTT12N150HV-ND IXTT12N150HV IXTT12N150HV
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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