Zilog Single FETs, MOSFETs IXTT120N15P

Description
MOSFET N-CH 150V 120A TO268
Request a Quote Datasheet
Description
MOSFET N-CH 150V 120A TO268
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXTT120N15P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTT120N15P
Single FETs, MOSFETs IXTT120N15P
MOSFET N-CH 150V 120A TO268

MOSFET N-CH 150V 120A TO268

Supplier's Site Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT120N15P - 1191295-IXTT120N15P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT120N15P
1191295-IXTT120N15P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT120N15P 1191295-IXTT120N15P
Manufacturer: IXYS Win Source Part Number: 1191295-IXTT120N15P Series: PolarHT Packaging: Tube Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA Mounting: SMD Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Family Name: IXTT120N15P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-268 Channel Type Type: N Drain Source Voltage: 150V Vgs(th) (Maximum) @ Id: 5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 150nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 4900pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 600W (Tc) Rds On (Maximum) @ Id, Vgs: 16 mOhm @ 500mA, 10V Introduction Date: April 20, 2005 ECCN: EAR99 Country of Origin: Republic of Korea Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 45 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191295-IXTT120N15P
Series: PolarHT
Packaging: Tube
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Mounting: SMD
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Family Name: IXTT120N15P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-268
Channel Type Type: N
Drain Source Voltage: 150V
Vgs(th) (Maximum) @ Id: 5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 150nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 4900pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 600W (Tc)
Rds On (Maximum) @ Id, Vgs: 16 mOhm @ 500mA, 10V
Introduction Date: April 20, 2005
ECCN: EAR99
Country of Origin: Republic of Korea
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 45 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTT120N15P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTT120N15P-ND
Single FETs, MOSFETs 238-IXTT120N15P-ND
N-Channel 150V 120A (Tc) 600W (Tc) Surface Mount TO-268AA

N-Channel 150V 120A (Tc) 600W (Tc) Surface Mount TO-268AA

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET POLAR HT MOSFET 150V 120A

MOSFET POLAR HT MOSFET 150V 120A

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT120N15P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTT120N15P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTT120N15P
MOSFET N-CH 150V 120A TO268

MOSFET N-CH 150V 120A TO268

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTT120N15P 1191295-IXTT120N15P 238-IXTT120N15P-ND IXTT120N15P IXTT120N15P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTT120N15P Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
Transistor Technology / Material MOSFET (Metal Oxide)
V(BR)DSS 150 volts
IDSS 120000 milliamps
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