Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs IXTT10N100D2

Description
Win Source Part Number: 1346778-IXTT10N100D2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 1000 V Power Dissipation (Max): 695W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: TO-268AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT10 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V
Request a Quote Datasheet
Description
Win Source Part Number: 1346778-IXTT10N100D2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 1000 V Power Dissipation (Max): 695W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: TO-268AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT10 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346778-IXTT10N100D2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1346778-IXTT10N100D2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1346778-IXTT10N100D2
Win Source Part Number: 1346778-IXTT10N100D2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 1000 V Power Dissipation (Max): 695W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: TO-268AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT10 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V

Win Source Part Number: 1346778-IXTT10N100D2
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Depletion
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 1000 V
Power Dissipation (Max): 695W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Supplier Device Package: TO-268AA
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTT10
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V

Buy Now Datasheet
Single FETs, MOSFETs - IXTT10N100D2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTT10N100D2-ND
Single FETs, MOSFETs IXTT10N100D2-ND
N-Channel 1000V 10A (Tc) 695W (Tc) Surface Mount TO-268AA

N-Channel 1000V 10A (Tc) 695W (Tc) Surface Mount TO-268AA

Buy Now Datasheet
Single FETs, MOSFETs - IXTT10N100D2 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTT10N100D2
Single FETs, MOSFETs IXTT10N100D2
MOSFET N-CH 1000V 10A TO268

MOSFET N-CH 1000V 10A TO268

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET D2 Depletion Mode Power MOSFETs

MOSFET D2 Depletion Mode Power MOSFETs

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT10N100D2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTT10N100D2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTT10N100D2
MOSFET N-CH 1000V 10A TO268

MOSFET N-CH 1000V 10A TO268

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1346778-IXTT10N100D2 IXTT10N100D2-ND IXTT10N100D2 IXTT10N100D2 IXTT10N100D2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel N-Channel; N-Channel
MOSFET Operating Mode Depletion
PD 695000 milliwatts 695000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 TO-268-3, D3PAK (2 Leads + Tab), TO-268AA TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
Unlock Full Specs
to access all available technical data

Similar Products

TRANSISTORS - Transistors (BJT) - Single - 2SA1006B-AZ - 906299-2SA1006B-AZ - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - UF3SC065040B7S - Acme Chip Technology Co., Limited
Specs
Package Type TO-263; TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packing Method Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
View Details
GaAs Fet Switches - KCB815 - Micross Components, Inc.
Micross Components, Inc.
Specs
Operating Frequency 6000 MHz
View Details