Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs IXTT10N100D2

Description
Win Source Part Number: 1346778-IXTT10N100D2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 1000 V Power Dissipation (Max): 695W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: TO-268AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT10 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346778-IXTT10N100D2 - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTT10N100D2 - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IXTT10N100D2-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT10N100D2 - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1346778-IXTT10N100D2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 1000 V Power Dissipation (Max): 695W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: TO-268AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT10 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs - 1346778-IXTT10N100D2 - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
1346778-IXTT10N100D2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs 1346778-IXTT10N100D2
Win Source Part Number: 1346778-IXTT10N100D2 Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Series: Depletion Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 1000 V Power Dissipation (Max): 695W (Tc) Mounting Type: Surface Mount Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA Supplier Device Package: TO-268AA Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 45 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTT10 Drive Voltage (Max Rds On, Min Rds On): 10V California Prop 65: Warning Information Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V

Win Source Part Number: 1346778-IXTT10N100D2
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: Depletion
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 1000 V
Power Dissipation (Max): 695W (Tc)
Mounting Type: Surface Mount
Package / Case: TO-268-3, D³Pak (2 Leads + Tab) , TO-268AA
Supplier Device Package: TO-268AA
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 45 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTT10
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 200 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 5320 pF @ 25 V

Buy Now Datasheet
Single FETs, MOSFETs - IXTT10N100D2 - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTT10N100D2
Single FETs, MOSFETs IXTT10N100D2
MOSFET N-CH 1000V 10A TO268

MOSFET N-CH 1000V 10A TO268

Supplier's Site Datasheet
Single FETs, MOSFETs - IXTT10N100D2-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTT10N100D2-ND
Single FETs, MOSFETs IXTT10N100D2-ND
N-Channel 1000V 10A (Tc) 695W (Tc) Surface Mount TO-268AA

N-Channel 1000V 10A (Tc) 695W (Tc) Surface Mount TO-268AA

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTT10N100D2 - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTT10N100D2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTT10N100D2
MOSFET N-CH 1000V 10A TO268

MOSFET N-CH 1000V 10A TO268

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTT10N100D2
MOSFET IXTT10N100D2
MOSFET D2 Depletion Mode Power MOSFETs

MOSFET D2 Depletion Mode Power MOSFETs

Buy Now Datasheet

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1346778-IXTT10N100D2 IXTT10N100D2 IXTT10N100D2-ND IXTT10N100D2 IXTT10N100D2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs Single FETs, MOSFETs Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel N-Channel
MOSFET Operating Mode Depletion
PD 695000 milliwatts 695000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type SOT3 TO-268-3, D³Pak (2 Leads + Tab), TO-268AA TO-268-3, D3PAK (2 Leads + Tab), TO-268AA TO-268-3, D3Pak (2 Leads + Tab), TO-268AA
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