P-Channel 600V 10A (Tc) 190W (Tc) Through Hole ISOPLUS247™
Win Source Part Number: 1346855-IXTR16P60P
Category: Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs
Series: PolarP™
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Drain to Source Voltage (Vdss): 600 V
Power Dissipation (Max): 190W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: ISOPLUS247™
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 42 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTR16
Drive Voltage (Max Rds On, Min Rds On): 10V
California Prop 65: Warning Information
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 790mOhm @ 8A, 10V
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 92 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5120 pF @ 25 V
MOSFET P-CH 600V 10A ISOPLUS247
MOSFET -10.0 Amps -600V 0.790 Rds
MOSFET P-CH 600V 10A ISOPLUS247
| DigiKey | Win Source Electronics | ODG (Origin Data Global) | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXTR16P60P-ND | 1346855-IXTR16P60P | IXTR16P60P | IXTR16P60P | IXTR16P60P |
| Product Name | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single FETs, MOSFETs | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel | P-Channel; P-Channel | ||
| Package Type | TO-247; TO-247-3 | SOT3 | TO-247; TO-247-3 | TO-247; TO-247-3 | |
| PD | 190000 milliwatts | 190000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
