Littelfuse, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXTR102N65X2

Description
Win Source Part Number: 1033576-IXTR102N65X2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Ultra X2 Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 51A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 330W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: ISOPLUS247™ Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STW78N65M5; STW77N65M5; IPW65R041CFDFKSA1; STW65N65DM2AG; TK62N60X,S1F; TK62N60W,S1VF; ECCN: EAR99 Fake Threat In the Open Market: 55 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: 632316 Base Product Number: IXTR102 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Win Source Part Number: 1033576-IXTR102N65X2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Ultra X2 Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 51A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 330W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: ISOPLUS247™ Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STW78N65M5; STW77N65M5; IPW65R041CFDFKSA1; STW65N65DM2AG; TK62N60X,S1F; TK62N60W,S1VF; ECCN: EAR99 Fake Threat In the Open Market: 55 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: 632316 Base Product Number: IXTR102 Drive Voltage (Max Rds On, Min Rds On): 10V
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Product
Description
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1033576-IXTR102N65X2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1033576-IXTR102N65X2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1033576-IXTR102N65X2
Win Source Part Number: 1033576-IXTR102N65X2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Ultra X2 Package: Tube Standard Package: 30 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 51A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 330W (Tc) Mounting Type: Through Hole Package / Case: TO-247-3 Supplier Device Package: ISOPLUS247™ Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STW78N65M5; STW77N65M5; IPW65R041CFDFKSA1; STW65N65DM2AG; TK62N60X,S1F; TK62N60W,S1VF; ECCN: EAR99 Fake Threat In the Open Market: 55 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: 632316 Base Product Number: IXTR102 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1033576-IXTR102N65X2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Ultra X2
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 51A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 330W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: ISOPLUS247™
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STW78N65M5; STW77N65M5; IPW65R041CFDFKSA1; STW65N65DM2AG; TK62N60X,S1F; TK62N60W,S1VF;
ECCN: EAR99
Fake Threat In the Open Market: 55 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: 632316
Base Product Number: IXTR102
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
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Single FETs, MOSFETs IXTR102N65X2-ND
N-Channel 650V 54A (Tc) 330W (Tc) Through Hole ISOPLUS247™

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTR102N65X2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTR102N65X2
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Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1033576-IXTR102N65X2 IXTR102N65X2-ND IXTR102N65X2 IXTR102N65X2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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