Win Source Part Number: 1033576-IXTR102N65X2
Category: Discrete Semiconductor Products>Transistors
Series: Ultra X2
Package: Tube
Standard Package: 30
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 54A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 51A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 330W (Tc)
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: ISOPLUS247™
Gate Charge (Qg) (Max) @ Vgs: 152 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STW78N65M5; STW77N65M5; IPW65R041CFDFKSA1; STW65N65DM2AG; TK62N60X,S1F; TK62N60W,S1VF;
ECCN: EAR99
Fake Threat In the Open Market: 55 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: 632316
Base Product Number: IXTR102
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 650V 54A (Tc) 330W (Tc) Through Hole ISOPLUS247™
MOSFET N-CH 650V 54A ISOPLUS247
MOSFET DISCMSFT NCHULTRAJNCTNX2CLASS
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1033576-IXTR102N65X2 | IXTR102N65X2-ND | IXTR102N65X2 | IXTR102N65X2 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel |
