N-Channel 300V 88A (Tc) 600W (Tc) Through Hole TO-3P
Manufacturer: IXYS
Win Source Part Number: 1049949-IXTQ88N30P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 600W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 88A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 180nC @ 10V
Max Input Capacitance: 6300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 40 mOhm @ 44A, 10V
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient
MOSFET N-CH 300V 88A TO-3P
MOSFET, N CHANNEL, 300V, 88A-AMP, 0.04OHM, THROUGH HOLE, 10V. FREE 2 YEAR RADWELL WARRANTY
MOSFET N-CH 300V 88A TO3P
| DigiKey | Win Source Electronics | Utmel Electronic Limited | Radwell International | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 238-IXTQ88N30P-ND | 1049949-IXTQ88N30P | 401-IXTQ88N30P | 38647265 | IXTQ88N30P | IXTQ88N30P |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ88N30P | MOSFET N-CH 300V 88A TO-3P | Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel; N-Channel | ||||
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3; TO-3P | Through Hole | |||
| V(BR)DSS | 300 volts | 300 volts | ||||
| PD | 600000 milliwatts | 600000 milliwatts | ||||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
