Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ52N30P IXTQ52N30P

Description
Manufacturer: IXYS Win Source Part Number: 205716-IXTQ52N30P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 52A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 3490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 66 mOhm @ 26A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ52N30P - 205716-IXTQ52N30P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTQ52N30P-ND - DigiKey
    DigiKey
  • Single FETs, MOSFETs - IXTQ52N30P - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • MOSFET N-CH 300V 52A TO-3P - 401-IXTQ52N30P - Utmel Electronic Limited
    Utmel Electronic Limited
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ52N30P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 205716-IXTQ52N30P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 52A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 3490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 66 mOhm @ 26A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ52N30P - 205716-IXTQ52N30P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ52N30P
205716-IXTQ52N30P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ52N30P 205716-IXTQ52N30P
Manufacturer: IXYS Win Source Part Number: 205716-IXTQ52N30P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 300V Continuous Drain Current at 25°C: 52A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 3490pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 66 mOhm @ 26A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 205716-IXTQ52N30P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 52A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 3490pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 66 mOhm @ 26A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXTQ52N30P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTQ52N30P-ND
Single FETs, MOSFETs IXTQ52N30P-ND
N-Channel 300V 52A (Tc) 400W (Tc) Through Hole TO-3P

N-Channel 300V 52A (Tc) 400W (Tc) Through Hole TO-3P

Buy Now Datasheet
Single FETs, MOSFETs - IXTQ52N30P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTQ52N30P
Single FETs, MOSFETs IXTQ52N30P
MOSFET N-CH 300V 52A TO3P

MOSFET N-CH 300V 52A TO3P

Supplier's Site Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTQ52N30P
MOSFET IXTQ52N30P
MOSFET 52 Amps 300V 0.066 Ohm Rds

MOSFET 52 Amps 300V 0.066 Ohm Rds

Buy Now Datasheet
MOSFET N-CH 300V 52A TO-3P - 401-IXTQ52N30P - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 300V 52A TO-3P
401-IXTQ52N30P
MOSFET N-CH 300V 52A TO-3P 401-IXTQ52N30P
MOSFET N-CH 300V 52A TO-3P

MOSFET N-CH 300V 52A TO-3P

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ52N30P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ52N30P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ52N30P
MOSFET N-CH 300V 52A TO3P

MOSFET N-CH 300V 52A TO3P

Supplier's Site

Technical Specifications

  Win Source Electronics DigiKey ODG (Origin Data Global) VAST STOCK CO., LIMITED Utmel Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 205716-IXTQ52N30P IXTQ52N30P-ND IXTQ52N30P IXTQ52N30P 401-IXTQ52N30P IXTQ52N30P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ52N30P Single FETs, MOSFETs Single FETs, MOSFETs MOSFET MOSFET N-CH 300V 52A TO-3P Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel N-Channel; N-Channel
V(BR)DSS 300 volts 300 volts 300 volts
PD 400000 milliwatts 400000 milliwatts 400000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-3; SOT3; TO-3P TO-3; TO-3P-3, SC-65-3 TO-3; TO-3P-3, SC-65-3 Through Hole
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