MOSFET N-CH 300V 52A TO3P
N-Channel 300V 52A (Tc) 400W (Tc) Through Hole TO-3P
Manufacturer: IXYS
Win Source Part Number: 205716-IXTQ52N30P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 300V
Continuous Drain Current at 25°C: 52A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 3490pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 66 mOhm @ 26A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
MOSFET 52 Amps 300V 0.066 Ohm Rds
MOSFET N-CH 300V 52A TO-3P
MOSFET N-CH 300V 52A TO3P
| ODG (Origin Data Global) | DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXTQ52N30P | IXTQ52N30P-ND | 205716-IXTQ52N30P | IXTQ52N30P | 401-IXTQ52N30P | IXTQ52N30P |
| Product Name | Single FETs, MOSFETs | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ52N30P | MOSFET | MOSFET N-CH 300V 52A TO-3P | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | N-Channel; N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||
| V(BR)DSS | 300 volts | 300 volts | 300 volts | |||
| IDSS | 52000 milliamps | |||||
| PD | 400000 milliwatts | 400000 milliwatts | 400000 milliwatts |
