Zilog Single FETs, MOSFETs IXTQ50N25T

Description
N-Channel 250V 50A (Tc) 400W (Tc) Through Hole TO-3P
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Description
N-Channel 250V 50A (Tc) 400W (Tc) Through Hole TO-3P
Request a Quote Datasheet

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Single FETs, MOSFETs - IXTQ50N25T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTQ50N25T-ND
Single FETs, MOSFETs IXTQ50N25T-ND
N-Channel 250V 50A (Tc) 400W (Tc) Through Hole TO-3P

N-Channel 250V 50A (Tc) 400W (Tc) Through Hole TO-3P

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ50N25T - 1049938-IXTQ50N25T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ50N25T
1049938-IXTQ50N25T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ50N25T 1049938-IXTQ50N25T
Manufacturer: IXYS Win Source Part Number: 1049938-IXTQ50N25T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 400W (Tc) Family Name: IXTQ50N25T Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 5V @ 1mA Max Gate Charge: 78nC @ 10V Max Input Capacitance: 4000pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 60 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): MTW32N25E; MTW23N25E; STW52NK25Z; Introduction Date: January 28, 2010 Country of Origin: Republic of Korea Estimated EOL Date: 2027 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049938-IXTQ50N25T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Family Name: IXTQ50N25T
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 4000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 60 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): MTW32N25E; MTW23N25E; STW52NK25Z;
Introduction Date: January 28, 2010
Country of Origin: Republic of Korea
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ50N25T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ50N25T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ50N25T
MOSFET N-CH 250V 50A TO3P

MOSFET N-CH 250V 50A TO3P

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 50Amps 250V

MOSFET 50Amps 250V

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTQ50N25T-ND 1049938-IXTQ50N25T IXTQ50N25T IXTQ50N25T
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ50N25T Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3P TO-3P-3, SC-65-3
V(BR)DSS 250 volts
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