Manufacturer: IXYS
Win Source Part Number: 1049938-IXTQ50N25T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Family Name: IXTQ50N25T
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 4000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 60 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): MTW32N25E; MTW23N25E; STW52NK25Z;
Introduction Date: January 28, 2010
Country of Origin: Republic of Korea
Estimated EOL Date: 2027
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient
N-Channel 250V 50A (Tc) 400W (Tc) Through Hole TO-3P
MOSFET N-CH 250V 50A TO3P
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049938-IXTQ50N25T | IXTQ50N25T-ND | IXTQ50N25T | IXTQ50N25T |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ50N25T | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 250 volts | |||
| PD | 400000 milliwatts |
