IXYS Corporation Single FETs, MOSFETs IXTQ48N20T

Description
N-Channel 200V 48A (Tc) 250W (Tc) Through Hole TO-3P
Request a Quote Datasheet
Description
N-Channel 200V 48A (Tc) 250W (Tc) Through Hole TO-3P
Request a Quote Datasheet

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Single FETs, MOSFETs - IXTQ48N20T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTQ48N20T-ND
Single FETs, MOSFETs IXTQ48N20T-ND
N-Channel 200V 48A (Tc) 250W (Tc) Through Hole TO-3P

N-Channel 200V 48A (Tc) 250W (Tc) Through Hole TO-3P

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ48N20T - 1049936-IXTQ48N20T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ48N20T
1049936-IXTQ48N20T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ48N20T 1049936-IXTQ48N20T
Manufacturer: IXYS Win Source Part Number: 1049936-IXTQ48N20T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 48A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 3090pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 50 mOhm @ 24A, 10V Popularity: Medium Fake Threat In the Open Market: 39 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049936-IXTQ48N20T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 48A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 3090pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 50 mOhm @ 24A, 10V
Popularity: Medium
Fake Threat In the Open Market: 39 pct.
Supply and Demand Status: Sufficient

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ48N20T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ48N20T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ48N20T
MOSFET N-CH 200V 48A TO3P

MOSFET N-CH 200V 48A TO3P

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 48 Amps 200V 50 Rds

MOSFET 48 Amps 200V 50 Rds

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTQ48N20T-ND 1049936-IXTQ48N20T IXTQ48N20T IXTQ48N20T
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ48N20T Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3P TO-3P-3, SC-65-3
V(BR)DSS 200 volts
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