Zilog Single FETs, MOSFETs IXTQ470P2

Description
N-Channel 500V 42A (Tc) 830W (Tc) Through Hole TO-3P
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Description
N-Channel 500V 42A (Tc) 830W (Tc) Through Hole TO-3P
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXTQ470P2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTQ470P2-ND
Single FETs, MOSFETs IXTQ470P2-ND
N-Channel 500V 42A (Tc) 830W (Tc) Through Hole TO-3P

N-Channel 500V 42A (Tc) 830W (Tc) Through Hole TO-3P

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ470P2 - 777663-IXTQ470P2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ470P2
777663-IXTQ470P2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ470P2 777663-IXTQ470P2
Manufacturer: IXYS Win Source Part Number: 777663-IXTQ470P2 Series: PolarP2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-3P-3, SC-65-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Family Name: IXTQ470P2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-3P Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 5400pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 830W (Tc) Rds On (Maximum) @ Id, Vgs: 145 mOhm @ 500mA, 10V Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 777663-IXTQ470P2
Series: PolarP2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-3P-3, SC-65-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Family Name: IXTQ470P2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-3P
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 88nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5400pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 830W (Tc)
Rds On (Maximum) @ Id, Vgs: 145 mOhm @ 500mA, 10V
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
MOSFET PolarP2 Power MOSFET

MOSFET PolarP2 Power MOSFET

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ470P2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ470P2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ470P2
MOSFET N-CH 500V 42A TO3P

MOSFET N-CH 500V 42A TO3P

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTQ470P2-ND 777663-IXTQ470P2 IXTQ470P2 IXTQ470P2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ470P2 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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