Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ470P2 IXTQ470P2

Description
Manufacturer: IXYS Win Source Part Number: 777663-IXTQ470P2 Series: PolarP2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-3P-3, SC-65-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Family Name: IXTQ470P2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-3P Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 5400pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 830W (Tc) Rds On (Maximum) @ Id, Vgs: 145 mOhm @ 500mA, 10V Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 777663-IXTQ470P2 Series: PolarP2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-3P-3, SC-65-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Family Name: IXTQ470P2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-3P Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 5400pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 830W (Tc) Rds On (Maximum) @ Id, Vgs: 145 mOhm @ 500mA, 10V Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ470P2 - 777663-IXTQ470P2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ470P2
777663-IXTQ470P2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ470P2 777663-IXTQ470P2
Manufacturer: IXYS Win Source Part Number: 777663-IXTQ470P2 Series: PolarP2 Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-3P-3, SC-65-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 42A (Tc) Family Name: IXTQ470P2 Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Package: TO-3P Channel Type Type: N Drain Source Voltage: 500V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 88nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 5400pF @ 25V Vgs (Maximum): ±30V Power Dissipation (Maximum): 830W (Tc) Rds On (Maximum) @ Id, Vgs: 145 mOhm @ 500mA, 10V Estimated EOL Date: 2029 Popularity: Medium Fake Threat In the Open Market: 67 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 777663-IXTQ470P2
Series: PolarP2
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-3P-3, SC-65-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Family Name: IXTQ470P2
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Package: TO-3P
Channel Type Type: N
Drain Source Voltage: 500V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 88nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 5400pF @ 25V
Vgs (Maximum): ±30V
Power Dissipation (Maximum): 830W (Tc)
Rds On (Maximum) @ Id, Vgs: 145 mOhm @ 500mA, 10V
Estimated EOL Date: 2029
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXTQ470P2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTQ470P2-ND
Single FETs, MOSFETs IXTQ470P2-ND
N-Channel 500V 42A (Tc) 830W (Tc) Through Hole TO-3P

N-Channel 500V 42A (Tc) 830W (Tc) Through Hole TO-3P

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ470P2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ470P2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ470P2
MOSFET N-CH 500V 42A TO3P

MOSFET N-CH 500V 42A TO3P

Supplier's Site
Sheung Wan, Hong Kong
MOSFET PolarP2 Power MOSFET

MOSFET PolarP2 Power MOSFET

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 777663-IXTQ470P2 IXTQ470P2-ND IXTQ470P2 IXTQ470P2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ470P2 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
PD 830000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

0.03 - 4.0 GHz, 30 Watt, 32 V GaN RF Transistor - TGF3021-SM - Qorvo
Specs
Transistor Technology / Material GaN
Transistor Grade / Operating Range Military
Package Type QFN
View Details
2 suppliers
 - AUIRFN8478TR - Rochester Electronics
Specs
Polarity N-Channel
Package Type SON11
Packing Method Tape Reel; Tape & Reel
View Details
2 suppliers