Zilog Single FETs, MOSFETs IXTQ36N50P

Description
N-Channel 500V 36A (Tc) 540W (Tc) Through Hole TO-3P
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Description
N-Channel 500V 36A (Tc) 540W (Tc) Through Hole TO-3P
Request a Quote Datasheet

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Product
Description
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Single FETs, MOSFETs - IXTQ36N50P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTQ36N50P-ND
Single FETs, MOSFETs IXTQ36N50P-ND
N-Channel 500V 36A (Tc) 540W (Tc) Through Hole TO-3P

N-Channel 500V 36A (Tc) 540W (Tc) Through Hole TO-3P

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ36N50P - 1049931-IXTQ36N50P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ36N50P
1049931-IXTQ36N50P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ36N50P 1049931-IXTQ36N50P
Manufacturer: IXYS Win Source Part Number: 1049931-IXTQ36N50P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 540W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 36A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 85nC @ 10V Max Input Capacitance: 5500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 170 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1049931-IXTQ36N50P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 540W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 36A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 85nC @ 10V
Max Input Capacitance: 5500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 170 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Limited

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Sheung Wan, Hong Kong
MOSFET 36.0 Amps 500 V 0.17 Ohm Rds

MOSFET 36.0 Amps 500 V 0.17 Ohm Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ36N50P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ36N50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ36N50P
MOSFET N-CH 500V 36A TO3P

MOSFET N-CH 500V 36A TO3P

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTQ36N50P-ND 1049931-IXTQ36N50P IXTQ36N50P IXTQ36N50P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ36N50P MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3P Through Hole
V(BR)DSS 500 volts
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