Manufacturer: IXYS
Win Source Part Number: 1049929-IXTQ30N60P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 540W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 82nC @ 10V
Max Input Capacitance: 5050pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 240 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 67 pct.
Supply and Demand Status: Sufficient
N-Channel 600V 30A (Tc) 540W (Tc) Through Hole TO-3P
MOSFET 30.0 Amps 600 V 0.24 Ohm Rds
MOSFET N-CH 600V 30A TO3P
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049929-IXTQ30N60P | IXTQ30N60P-ND | IXTQ30N60P | IXTQ30N60P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ30N60P | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 600 volts | |||
| PD | 540000 milliwatts |
