Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ30N50P IXTQ30N50P

Description
Manufacturer: IXYS Win Source Part Number: 1049928-IXTQ30N50P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 460W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 4150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 200 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ30N50P - 1049928-IXTQ30N50P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTQ30N50P-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ30N50P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 500V 30A TO-3P - 401-IXTQ30N50P - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049928-IXTQ30N50P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 460W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 4150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 200 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ30N50P - 1049928-IXTQ30N50P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ30N50P
1049928-IXTQ30N50P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ30N50P 1049928-IXTQ30N50P
Manufacturer: IXYS Win Source Part Number: 1049928-IXTQ30N50P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 460W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 30A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 4150pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 200 mOhm @ 15A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049928-IXTQ30N50P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 460W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 30A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 4150pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 200 mOhm @ 15A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IXTQ30N50P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTQ30N50P-ND
Single FETs, MOSFETs IXTQ30N50P-ND
N-Channel 500V 30A (Tc) 460W (Tc) Through Hole TO-3P

N-Channel 500V 30A (Tc) 460W (Tc) Through Hole TO-3P

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ30N50P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ30N50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ30N50P
MOSFET N-CH 500V 30A TO3P

MOSFET N-CH 500V 30A TO3P

Supplier's Site
MOSFET N-CH 500V 30A TO-3P - 401-IXTQ30N50P - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 500V 30A TO-3P
401-IXTQ30N50P
MOSFET N-CH 500V 30A TO-3P 401-IXTQ30N50P
MOSFET N-CH 500V 30A TO-3P

MOSFET N-CH 500V 30A TO-3P

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTQ30N50P
MOSFET IXTQ30N50P
MOSFET 30.0 Amps 500 V 0.2 Ohm Rds

MOSFET 30.0 Amps 500 V 0.2 Ohm Rds

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049928-IXTQ30N50P IXTQ30N50P-ND IXTQ30N50P 401-IXTQ30N50P IXTQ30N50P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ30N50P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 500V 30A TO-3P MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 500 volts 500 volts
PD 460000 milliwatts 460000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-3; SOT3; TO-3P TO-3; TO-3P-3, SC-65-3 TO-3P-3, SC-65-3
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