N-Channel 600V 22A (Tc) 400W (Tc) Through Hole TO-3P
Manufacturer: IXYS
Win Source Part Number: 1049926-IXTQ22N60P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 62nC @ 10V
Max Input Capacitance: 3600pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 350 mOhm @ 11A, 10V
Alternative Parts (Cross-Reference): STW13NM60N; SiHG17N60D-E3; IRFP22N60KPBF;
Popularity: Medium
Fake Threat In the Open Market: 71 pct.
Supply and Demand Status: Sufficient
MOSFET 22.0 Amps 600 V 0.33 Ohm Rds
MOSFET N-CH 600V 22A TO3P
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | IXTQ22N60P-ND | 1049926-IXTQ22N60P | IXTQ22N60P | IXTQ22N60P |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ22N60P | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel; N-Channel | ||
| Package Type | TO-3; TO-3P-3, SC-65-3 | TO-3; SOT3; TO-3P | TO-3P-3, SC-65-3 | |
| V(BR)DSS | 600 volts |
