Zilog Single FETs, MOSFETs IXTQ22N50P

Description
N-Channel 500V 22A (Tc) 350W (Tc) Through Hole TO-3P
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Description
N-Channel 500V 22A (Tc) 350W (Tc) Through Hole TO-3P
Request a Quote Datasheet

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Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXTQ22N50P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTQ22N50P-ND
Single FETs, MOSFETs 238-IXTQ22N50P-ND
N-Channel 500V 22A (Tc) 350W (Tc) Through Hole TO-3P

N-Channel 500V 22A (Tc) 350W (Tc) Through Hole TO-3P

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ22N50P - 1049925-IXTQ22N50P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ22N50P
1049925-IXTQ22N50P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ22N50P 1049925-IXTQ22N50P
Manufacturer: IXYS Win Source Part Number: 1049925-IXTQ22N50P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 500V Continuous Drain Current at 25°C: 22A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 50nC @ 10V Max Input Capacitance: 2630pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 270 mOhm @ 11A, 10V Popularity: Medium Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049925-IXTQ22N50P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 22A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 50nC @ 10V
Max Input Capacitance: 2630pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 270 mOhm @ 11A, 10V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ22N50P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ22N50P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ22N50P
MOSFET N-CH 500V 22A TO3P

MOSFET N-CH 500V 22A TO3P

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 22.0 Amps 500 V 0.27 Ohm Rds

MOSFET 22.0 Amps 500 V 0.27 Ohm Rds

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXTQ22N50P-ND 1049925-IXTQ22N50P IXTQ22N50P IXTQ22N50P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ22N50P Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3P TO-3P-3, SC-65-3
V(BR)DSS 500 volts
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