Zilog Single FETs, MOSFETs IXTQ200N10T

Description
N-Channel 100V 200A (Tc) 550W (Tc) Through Hole TO-3P
Request a Quote Datasheet
Description
N-Channel 100V 200A (Tc) 550W (Tc) Through Hole TO-3P
Request a Quote Datasheet

Suppliers

Company
Product
Description
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Single FETs, MOSFETs - IXTQ200N10T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTQ200N10T-ND
Single FETs, MOSFETs IXTQ200N10T-ND
N-Channel 100V 200A (Tc) 550W (Tc) Through Hole TO-3P

N-Channel 100V 200A (Tc) 550W (Tc) Through Hole TO-3P

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ200N10T - 1049924-IXTQ200N10T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ200N10T
1049924-IXTQ200N10T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ200N10T 1049924-IXTQ200N10T
Manufacturer: IXYS Win Source Part Number: 1049924-IXTQ200N10T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 550W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 200A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 152nC @ 10V Max Input Capacitance: 9400pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 5.5 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049924-IXTQ200N10T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 550W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 200A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 152nC @ 10V
Max Input Capacitance: 9400pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 5.5 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 200 Amps 100V 5.4 Rds

MOSFET 200 Amps 100V 5.4 Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ200N10T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ200N10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ200N10T
MOSFET N-CH 100V 200A TO3P

MOSFET N-CH 100V 200A TO3P

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTQ200N10T-ND 1049924-IXTQ200N10T IXTQ200N10T IXTQ200N10T
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ200N10T MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3P Through Hole
V(BR)DSS 100 volts
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