Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ200N06P IXTQ200N06P

Description
Manufacturer: IXYS Win Source Part Number: 1049923-IXTQ200N06P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 714W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 200A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 5400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 400A, 15V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ200N06P - 1049923-IXTQ200N06P - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ200N06P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049923-IXTQ200N06P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 714W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 200A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 5400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 400A, 15V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ200N06P - 1049923-IXTQ200N06P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ200N06P
1049923-IXTQ200N06P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ200N06P 1049923-IXTQ200N06P
Manufacturer: IXYS Win Source Part Number: 1049923-IXTQ200N06P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 714W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 60V Continuous Drain Current at 25°C: 200A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 200nC @ 10V Max Input Capacitance: 5400pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5 mOhm @ 400A, 15V Popularity: Medium Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049923-IXTQ200N06P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 714W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 60V
Continuous Drain Current at 25°C: 200A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 200nC @ 10V
Max Input Capacitance: 5400pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5 mOhm @ 400A, 15V
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ200N06P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ200N06P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ200N06P
MOSFET N-CH 60V 200A TO3P

MOSFET N-CH 60V 200A TO3P

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049923-IXTQ200N06P IXTQ200N06P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ200N06P Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel
V(BR)DSS 60 volts
PD 714000 milliwatts
Unlock Full Specs
to access all available technical data