Manufacturer: IXYS
Win Source Part Number: 1049914-IXTQ14N60P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 14A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 2500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 550 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient
MOSFET, 14A, 600V, 300W, N-CHANNEL, TO-3P-3. FREE 2 YEAR RADWELL WARRANTY
N-Channel 600V 14A (Tc) 300W (Tc) Through Hole TO-3P
MOSFET 14.0 Amps 600 V 0.55 Ohm Rds
MOSFET N-CH 600V 14A TO3P
| Win Source Electronics | Radwell International | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 1049914-IXTQ14N60P | 153890483 | IXTQ14N60P-ND | IXTQ14N60P | IXTQ14N60P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ14N60P | Transistor | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 600 volts | ||||
| PD | 300000 milliwatts |
