Zilog Single FETs, MOSFETs IXTQ140N10P

Description
N-Channel 100V 140A (Tc) 600W (Tc) Through Hole TO-3P
Request a Quote Datasheet
Description
N-Channel 100V 140A (Tc) 600W (Tc) Through Hole TO-3P
Request a Quote Datasheet

Suppliers

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Product
Description
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Single FETs, MOSFETs - IXTQ140N10P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTQ140N10P-ND
Single FETs, MOSFETs IXTQ140N10P-ND
N-Channel 100V 140A (Tc) 600W (Tc) Through Hole TO-3P

N-Channel 100V 140A (Tc) 600W (Tc) Through Hole TO-3P

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ140N10P - 1049913-IXTQ140N10P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ140N10P
1049913-IXTQ140N10P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ140N10P 1049913-IXTQ140N10P
Manufacturer: IXYS Win Source Part Number: 1049913-IXTQ140N10P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 600W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 140A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 155nC @ 10V Max Input Capacitance: 4700pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 11 mOhm @ 70A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049913-IXTQ140N10P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 600W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 140A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 155nC @ 10V
Max Input Capacitance: 4700pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 11 mOhm @ 70A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Sufficient

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ140N10P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ140N10P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ140N10P
MOSFET N-CH 100V 140A TO3P

MOSFET N-CH 100V 140A TO3P

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 140 Amps 100V 0.011 Rds

MOSFET 140 Amps 100V 0.011 Rds

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTQ140N10P-ND 1049913-IXTQ140N10P IXTQ140N10P IXTQ140N10P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ140N10P Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3P TO-3P-3, SC-65-3
V(BR)DSS 100 volts
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