Manufacturer: IXYS
Win Source Part Number: 040918-IXTQ130N10T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 130A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 104nC @ 10V
Max Input Capacitance: 5080pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 9.1 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Limited
N-Channel 100V 130A (Tc) 360W (Tc) Through Hole TO-3P
MOSFET N-CH 100V 130A TO3P
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 040918-IXTQ130N10T | IXTQ130N10T-ND | IXTQ130N10T | IXTQ130N10T |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ130N10T | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 100 volts | |||
| PD | 360000 milliwatts |
