Zilog Single FETs, MOSFETs IXTQ120N15P

Description
N-Channel 150V 120A (Tc) 600W (Tc) Through Hole TO-3P
Request a Quote Datasheet
Description
N-Channel 150V 120A (Tc) 600W (Tc) Through Hole TO-3P
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXTQ120N15P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTQ120N15P-ND
Single FETs, MOSFETs IXTQ120N15P-ND
N-Channel 150V 120A (Tc) 600W (Tc) Through Hole TO-3P

N-Channel 150V 120A (Tc) 600W (Tc) Through Hole TO-3P

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ120N15P - 1049910-IXTQ120N15P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ120N15P
1049910-IXTQ120N15P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ120N15P 1049910-IXTQ120N15P
Manufacturer: IXYS Win Source Part Number: 1049910-IXTQ120N15P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 600W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 150nC @ 10V Max Input Capacitance: 4900pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 16 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049910-IXTQ120N15P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 600W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 150nC @ 10V
Max Input Capacitance: 4900pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 16 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ120N15P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ120N15P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ120N15P
MOSFET N-CH 150V 120A TO3P

MOSFET N-CH 150V 120A TO3P

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 120 Amps 150V 0.016 Rds

MOSFET 120 Amps 150V 0.016 Rds

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTQ120N15P-ND 1049910-IXTQ120N15P IXTQ120N15P IXTQ120N15P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ120N15P Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-3; TO-3P-3, SC-65-3 TO-3; SOT3; TO-3P TO-3P-3, SC-65-3
V(BR)DSS 150 volts
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