Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ110N10P IXTQ110N10P

Description
Manufacturer: IXYS Win Source Part Number: 1049909-IXTQ110N10P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 480W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 3550pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ110N10P - 1049909-IXTQ110N10P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTQ110N10P - ODG (Origin Data Global)
    ODG (Origin Data Global)
  • Single FETs, MOSFETs - IXTQ110N10P-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ110N10P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049909-IXTQ110N10P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 480W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 3550pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ110N10P - 1049909-IXTQ110N10P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ110N10P
1049909-IXTQ110N10P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ110N10P 1049909-IXTQ110N10P
Manufacturer: IXYS Win Source Part Number: 1049909-IXTQ110N10P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 480W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 110nC @ 10V Max Input Capacitance: 3550pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 15 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049909-IXTQ110N10P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 480W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 110nC @ 10V
Max Input Capacitance: 3550pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 15 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IXTQ110N10P - ODG (Origin Data Global)
ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTQ110N10P
Single FETs, MOSFETs IXTQ110N10P
MOSFET N-CH 100V 110A TO3P

MOSFET N-CH 100V 110A TO3P

Supplier's Site Datasheet
Single FETs, MOSFETs - IXTQ110N10P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTQ110N10P-ND
Single FETs, MOSFETs IXTQ110N10P-ND
N-Channel 100V 110A (Tc) 480W (Tc) Through Hole TO-3P

N-Channel 100V 110A (Tc) 480W (Tc) Through Hole TO-3P

Buy Now Datasheet
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTQ110N10P
MOSFET IXTQ110N10P
MOSFET 110 Amps 100V 0.015 Rds

MOSFET 110 Amps 100V 0.015 Rds

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ110N10P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ110N10P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ110N10P
MOSFET N-CH 100V 110A TO3P

MOSFET N-CH 100V 110A TO3P

Supplier's Site

Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049909-IXTQ110N10P IXTQ110N10P IXTQ110N10P-ND IXTQ110N10P IXTQ110N10P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ110N10P Single FETs, MOSFETs Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts 100 volts
PD 480000 milliwatts 480000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Unlock Full Specs
to access all available technical data