Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ110N055P IXTQ110N055P

Description
Manufacturer: IXYS Win Source Part Number: 1049908-IXTQ110N055P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 390W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 76nC @ 10V Max Input Capacitance: 2210pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.5 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ110N055P - 1049908-IXTQ110N055P - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ110N055P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 55V 110A TO-3P - 401-IXTQ110N055P - Utmel Electronic Limited
    Utmel Electronic Limited
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Description
Manufacturer: IXYS Win Source Part Number: 1049908-IXTQ110N055P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 390W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 76nC @ 10V Max Input Capacitance: 2210pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.5 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

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Description
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ110N055P - 1049908-IXTQ110N055P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ110N055P
1049908-IXTQ110N055P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ110N055P 1049908-IXTQ110N055P
Manufacturer: IXYS Win Source Part Number: 1049908-IXTQ110N055P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 390W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 110A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 76nC @ 10V Max Input Capacitance: 2210pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 13.5 mOhm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 47 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049908-IXTQ110N055P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 390W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 76nC @ 10V
Max Input Capacitance: 2210pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 13.5 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 47 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ110N055P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ110N055P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ110N055P
MOSFET N-CH 55V 110A TO3P

MOSFET N-CH 55V 110A TO3P

Supplier's Site
MOSFET N-CH 55V 110A TO-3P - 401-IXTQ110N055P - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 55V 110A TO-3P
401-IXTQ110N055P
MOSFET N-CH 55V 110A TO-3P 401-IXTQ110N055P
MOSFET N-CH 55V 110A TO-3P

MOSFET N-CH 55V 110A TO-3P

Supplier's Site

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049908-IXTQ110N055P IXTQ110N055P 401-IXTQ110N055P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ110N055P Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 55V 110A TO-3P
Polarity N-Channel; N-Channel
V(BR)DSS 55 volts 55 volts
PD 390000 milliwatts 390000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-3; SOT3; TO-3P TO-3P-3, SC-65-3
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