IXYS Corporation TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ102N20T IXTQ102N20T

Manufacturer: IXYS
Win Source Part Number: 1049907-IXTQ102N20T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 750W (Tc)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 102A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 1mA
Max Gate Charge: 114nC @ 10V
Max Input Capacitance: 6800pF @ 25V
Maximum Rds On at Id,Vgs: 23 mOhm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 40 pct.
Supply and Demand Status: Sufficient

MOSFET N-CH 200V 102A TO3P Product overview: IXTQ102N20T from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 200V, 102A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 200V, 102A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTQ102N20T can be used for catalog matching and distributor lookup.