Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ100N25P IXTQ100N25P

Description
Manufacturer: IXYS Win Source Part Number: 1049905-IXTQ100N25P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 600W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 6300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: IXYS Win Source Part Number: 1049905-IXTQ100N25P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 600W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 6300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ100N25P - 1049905-IXTQ100N25P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ100N25P
1049905-IXTQ100N25P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ100N25P 1049905-IXTQ100N25P
Manufacturer: IXYS Win Source Part Number: 1049905-IXTQ100N25P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 600W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 6300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049905-IXTQ100N25P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 600W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 185nC @ 10V
Max Input Capacitance: 6300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IXTQ100N25P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTQ100N25P-ND
Single FETs, MOSFETs IXTQ100N25P-ND
N-Channel 250V 100A (Tc) 600W (Tc) Through Hole TO-3P

N-Channel 250V 100A (Tc) 600W (Tc) Through Hole TO-3P

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ100N25P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ100N25P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ100N25P
MOSFET N-CH 250V 100A TO3P

MOSFET N-CH 250V 100A TO3P

Supplier's Site
MOSFET N-CH 250V 100A TO-3P - 401-IXTQ100N25P - Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 250V 100A TO-3P
401-IXTQ100N25P
MOSFET N-CH 250V 100A TO-3P 401-IXTQ100N25P
MOSFET N-CH 250V 100A TO-3P

MOSFET N-CH 250V 100A TO-3P

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 100 Amps 250V 0.027 Rds

MOSFET 100 Amps 250V 0.027 Rds

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049905-IXTQ100N25P IXTQ100N25P-ND IXTQ100N25P 401-IXTQ100N25P IXTQ100N25P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ100N25P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 250V 100A TO-3P MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 250 volts 250 volts
PD 600000 milliwatts 600000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-3; SOT3; TO-3P TO-3; TO-3P-3, SC-65-3 Through Hole
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