Manufacturer: IXYS
Win Source Part Number: 1049905-IXTQ100N25P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 600W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 185nC @ 10V
Max Input Capacitance: 6300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient
N-Channel 250V 100A (Tc) 600W (Tc) Through Hole TO-3P
MOSFET N-CH 250V 100A TO3P
MOSFET N-CH 250V 100A TO-3P
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1049905-IXTQ100N25P | IXTQ100N25P-ND | IXTQ100N25P | IXTQ100N25P | 401-IXTQ100N25P |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ100N25P | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 250V 100A TO-3P |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| V(BR)DSS | 250 volts | 250 volts | |||
| PD | 600000 milliwatts | 600000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) | |||
| Package Type | TO-3; SOT3; TO-3P | TO-3; TO-3P-3, SC-65-3 | Through Hole |
