Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ100N25P IXTQ100N25P

Description
Manufacturer: IXYS Win Source Part Number: 1049905-IXTQ100N25P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 600W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 6300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ100N25P - 1049905-IXTQ100N25P - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTQ100N25P-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ100N25P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 250V 100A TO-3P - 401-IXTQ100N25P - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 1049905-IXTQ100N25P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 600W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 6300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ100N25P - 1049905-IXTQ100N25P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ100N25P
1049905-IXTQ100N25P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ100N25P 1049905-IXTQ100N25P
Manufacturer: IXYS Win Source Part Number: 1049905-IXTQ100N25P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 600W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-3P Dimension: TO-3P-3, SC-65-3 Drain-Source Breakdown Voltage: 250V Continuous Drain Current at 25°C: 100A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 185nC @ 10V Max Input Capacitance: 6300pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 24 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 69 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049905-IXTQ100N25P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 600W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-3P
Dimension: TO-3P-3, SC-65-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 100A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 185nC @ 10V
Max Input Capacitance: 6300pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 24 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 69 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Single FETs, MOSFETs - IXTQ100N25P-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTQ100N25P-ND
Single FETs, MOSFETs IXTQ100N25P-ND
N-Channel 250V 100A (Tc) 600W (Tc) Through Hole TO-3P

N-Channel 250V 100A (Tc) 600W (Tc) Through Hole TO-3P

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTQ100N25P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTQ100N25P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTQ100N25P
MOSFET N-CH 250V 100A TO3P

MOSFET N-CH 250V 100A TO3P

Supplier's Site
MOSFET N-CH 250V 100A TO-3P - 401-IXTQ100N25P - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 250V 100A TO-3P
401-IXTQ100N25P
MOSFET N-CH 250V 100A TO-3P 401-IXTQ100N25P
MOSFET N-CH 250V 100A TO-3P

MOSFET N-CH 250V 100A TO-3P

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTQ100N25P
MOSFET IXTQ100N25P
MOSFET 100 Amps 250V 0.027 Rds

MOSFET 100 Amps 250V 0.027 Rds

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1049905-IXTQ100N25P IXTQ100N25P-ND IXTQ100N25P 401-IXTQ100N25P IXTQ100N25P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTQ100N25P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 250V 100A TO-3P MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 250 volts 250 volts
PD 600000 milliwatts 600000 milliwatts
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
Package Type TO-3; SOT3; TO-3P TO-3; TO-3P-3, SC-65-3 Through Hole
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