Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP90N055T2 IXTP90N055T2

Description
Manufacturer: IXYS Win Source Part Number: 119110-IXTP90N055T2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 2770pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.4 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 50
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 119110-IXTP90N055T2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 2770pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.4 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 50
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP90N055T2 - 119110-IXTP90N055T2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP90N055T2
119110-IXTP90N055T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP90N055T2 119110-IXTP90N055T2
Manufacturer: IXYS Win Source Part Number: 119110-IXTP90N055T2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 150W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 90A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 2770pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 8.4 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 52 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 119110-IXTP90N055T2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 150W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 90A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 2770pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 8.4 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - IXTP90N055T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP90N055T2-ND
Single FETs, MOSFETs IXTP90N055T2-ND
N-Channel 55V 90A (Tc) 150W (Tc) Through Hole TO-220-3

N-Channel 55V 90A (Tc) 150W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP90N055T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP90N055T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP90N055T2
MOSFET N-CH 55V 90A TO220AB

MOSFET N-CH 55V 90A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 90 Amps 55V 0.0084 Rds

MOSFET 90 Amps 55V 0.0084 Rds

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 119110-IXTP90N055T2 IXTP90N055T2-ND IXTP90N055T2 IXTP90N055T2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP90N055T2 Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 55 volts
PD 150000 milliwatts
Unlock Full Specs
to access all available technical data

Similar Products

650V 85A TO220 MOSFET Transistor - 278-UF3C065030T3S - ERSAELECTRONICS PTE. LTD.
Specs
Polarity N-Channel
MOSFET Operating Mode Enhancement
PD 441 milliwatts
View Details
4 suppliers
TRANSISTORS - Transistors (BJT) - Single - 2N3904TF - 854966-2N3904TF - Win Source Electronics
Specs
Transistor Type Bipolar RF
Package Type SOT3
View Details