Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP80N10T IXTP80N10T

Description
Manufacturer: IXYS Win Source Part Number: 205714-IXTP80N10T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 3040pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): IRFB4710PBF; HUF75645P3_NL; HUF75645P3_Q; IXTP80N10T; Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Quantity per package: 50
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Description
Manufacturer: IXYS Win Source Part Number: 205714-IXTP80N10T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 3040pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): IRFB4710PBF; HUF75645P3_NL; HUF75645P3_Q; IXTP80N10T; Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Quantity per package: 50
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP80N10T - 205714-IXTP80N10T - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP80N10T
205714-IXTP80N10T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP80N10T 205714-IXTP80N10T
Manufacturer: IXYS Win Source Part Number: 205714-IXTP80N10T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 230W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 100V Continuous Drain Current at 25°C: 80A (Tc) Gate-Source Threshold Voltage: 5V @ 100μA Max Gate Charge: 60nC @ 10V Max Input Capacitance: 3040pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 14 mOhm @ 25A, 10V Alternative Parts (Cross-Reference): IRFB4710PBF; HUF75645P3_NL; HUF75645P3_Q; IXTP80N10T; Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Limited Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 205714-IXTP80N10T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 3040pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): IRFB4710PBF; HUF75645P3_NL; HUF75645P3_Q; IXTP80N10T;
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - IXTP80N10T-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP80N10T-ND
Single FETs, MOSFETs IXTP80N10T-ND
N-Channel 100V 80A (Tc) 230W (Tc) Through Hole TO-220-3

N-Channel 100V 80A (Tc) 230W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP80N10T - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP80N10T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP80N10T
MOSFET N-CH 100V 80A TO220AB

MOSFET N-CH 100V 80A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 80 Amps 100V 13.0 Rds

MOSFET 80 Amps 100V 13.0 Rds

Buy Now

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 205714-IXTP80N10T IXTP80N10T-ND IXTP80N10T IXTP80N10T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP80N10T Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 100 volts
PD 230000 milliwatts
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