Manufacturer: IXYS
Win Source Part Number: 205714-IXTP80N10T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 230W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 80A (Tc)
Gate-Source Threshold Voltage: 5V @ 100μA
Max Gate Charge: 60nC @ 10V
Max Input Capacitance: 3040pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 14 mOhm @ 25A, 10V
Alternative Parts (Cross-Reference): IRFB4710PBF; HUF75645P3_NL; HUF75645P3_Q; IXTP80N10T;
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Limited
Quantity per package: 50
N-Channel 100V 80A (Tc) 230W (Tc) Through Hole TO-220-3
MOSFET N-CH 100V 80A TO220AB
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 205714-IXTP80N10T | IXTP80N10T-ND | IXTP80N10T | IXTP80N10T |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP80N10T | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 100 volts | |||
| PD | 230000 milliwatts |
