Littelfuse, Inc. Single FETs, MOSFETs IXTP62N15P

Description
N-Channel 150V 62A (Tc) 350W (Tc) Through Hole TO-220-3
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Description
N-Channel 150V 62A (Tc) 350W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXTP62N15P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP62N15P-ND
Single FETs, MOSFETs IXTP62N15P-ND
N-Channel 150V 62A (Tc) 350W (Tc) Through Hole TO-220-3

N-Channel 150V 62A (Tc) 350W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP62N15P - 1049898-IXTP62N15P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP62N15P
1049898-IXTP62N15P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP62N15P 1049898-IXTP62N15P
Manufacturer: IXYS Win Source Part Number: 1049898-IXTP62N15P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 350W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 62A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 2250pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 40 mOhm @ 31A, 10V Popularity: Medium Fake Threat In the Open Market: 38 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049898-IXTP62N15P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 350W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 62A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2250pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 40 mOhm @ 31A, 10V
Popularity: Medium
Fake Threat In the Open Market: 38 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 62 Amps 150V 0.04 Rds

MOSFET 62 Amps 150V 0.04 Rds

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP62N15P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP62N15P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP62N15P
MOSFET N-CH 150V 62A TO220AB

MOSFET N-CH 150V 62A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTP62N15P-ND 1049898-IXTP62N15P IXTP62N15P IXTP62N15P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP62N15P MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 150 volts
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