Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP56N15T IXTP56N15T

Description
Manufacturer: IXYS Win Source Part Number: 205712-IXTP56N15T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 56A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 2250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 36 mOhm @ 28A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
  • TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP56N15T - 205712-IXTP56N15T - Win Source Electronics
    Win Source Electronics
  • Single FETs, MOSFETs - IXTP56N15T-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP56N15T - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
  • MOSFET N-CH 150V 56A TO-220 - 401-IXTP56N15T - Utmel Electronic Limited
    Utmel Electronic Limited
Request a Quote Datasheet
Description
Manufacturer: IXYS Win Source Part Number: 205712-IXTP56N15T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 56A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 2250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 36 mOhm @ 28A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP56N15T - 205712-IXTP56N15T - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP56N15T
205712-IXTP56N15T
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP56N15T 205712-IXTP56N15T
Manufacturer: IXYS Win Source Part Number: 205712-IXTP56N15T Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 300W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 150V Continuous Drain Current at 25°C: 56A (Tc) Gate-Source Threshold Voltage: 4.5V @ 250μA Max Gate Charge: 34nC @ 10V Max Input Capacitance: 2250pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 36 mOhm @ 28A, 10V Popularity: Medium Fake Threat In the Open Market: 66 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 205712-IXTP56N15T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 300W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 150V
Continuous Drain Current at 25°C: 56A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 34nC @ 10V
Max Input Capacitance: 2250pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 36 mOhm @ 28A, 10V
Popularity: Medium
Fake Threat In the Open Market: 66 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - IXTP56N15T-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP56N15T-ND
Single FETs, MOSFETs IXTP56N15T-ND
N-Channel 150V 56A (Tc) 300W (Tc) Through Hole TO-220-3

N-Channel 150V 56A (Tc) 300W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP56N15T - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP56N15T
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP56N15T
MOSFET N-CH 150V 56A TO220AB

MOSFET N-CH 150V 56A TO220AB

Supplier's Site
MOSFET N-CH 150V 56A TO-220 - 401-IXTP56N15T - Utmel Electronic Limited
Utmel Electronic Limited
Hong Kong, China
MOSFET N-CH 150V 56A TO-220
401-IXTP56N15T
MOSFET N-CH 150V 56A TO-220 401-IXTP56N15T
MOSFET N-CH 150V 56A TO-220

MOSFET N-CH 150V 56A TO-220

Supplier's Site
VAST STOCK CO., LIMITED
Sheung Wan, Hong Kong
MOSFET
IXTP56N15T
MOSFET IXTP56N15T
MOSFET 56 Amps 150V 36 Rds

MOSFET 56 Amps 150V 36 Rds

Buy Now Datasheet

Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited Utmel Electronic Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 205712-IXTP56N15T IXTP56N15T-ND IXTP56N15T 401-IXTP56N15T IXTP56N15T
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP56N15T Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET N-CH 150V 56A TO-220 MOSFET
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 150 volts 150 volts
PD 300000 milliwatts 300000 milliwatts
TJ -55 to 175 C (-67 to 347 F) -55 to 175 C (-67 to 347 F)
Package Type TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3
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