MOSFET N-CH 250V 50A TO220AB
Manufacturer: IXYS
Win Source Part Number: 1049895-IXTP50N25T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 400W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 250V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 5V @ 1mA
Max Gate Charge: 78nC @ 10V
Max Input Capacitance: 4000pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 50 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited
N-Channel 250V 50A (Tc) 400W (Tc) Through Hole TO-220-3
MOSFET N-CH 250V 50A TO220AB
MOSFET N-CH 250V 50A TO-220
| ODG (Origin Data Global) | Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | IXTP50N25T | 1049895-IXTP50N25T | IXTP50N25T-ND | IXTP50N25T | IXTP50N25T | 401-IXTP50N25T |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP50N25T | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 250V 50A TO-220 |
| Polarity | N-Channel; N-Channel | N-Channel; N-Channel | N-Channel | |||
| Transistor Technology / Material | MOSFET (Metal Oxide) | SILICON | ||||
| V(BR)DSS | 250 volts | 250 volts | 250 volts | |||
| IDSS | 50000 milliamps | |||||
| PD | 400000 milliwatts | 400000 milliwatts | 400000 milliwatts |
