Littelfuse, Inc. Single FETs, MOSFETs IXTP50N20P

Description
N-Channel 200V 50A (Tc) 360W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 200V 50A (Tc) 360W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXTP50N20P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP50N20P-ND
Single FETs, MOSFETs IXTP50N20P-ND
N-Channel 200V 50A (Tc) 360W (Tc) Through Hole TO-220-3

N-Channel 200V 50A (Tc) 360W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP50N20P - 139505-IXTP50N20P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP50N20P
139505-IXTP50N20P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP50N20P 139505-IXTP50N20P
Manufacturer: IXYS Win Source Part Number: 139505-IXTP50N20P Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 200V Continuous Drain Current at 25°C: 50A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 70nC @ 10V Max Input Capacitance: 2720pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 60 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 48 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 139505-IXTP50N20P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 50A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 70nC @ 10V
Max Input Capacitance: 2720pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 60 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 48 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP50N20P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP50N20P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP50N20P
MOSFET N-CH 200V 50A TO220AB

MOSFET N-CH 200V 50A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 50 Amps 200V 0.06 Rds

MOSFET 50 Amps 200V 0.06 Rds

Buy Now Datasheet

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP50N20P-ND 139505-IXTP50N20P IXTP50N20P IXTP50N20P
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP50N20P Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 200 volts
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