Littelfuse, Inc. Single FETs, MOSFETs IXTP4N80P

Description
N-Channel 800V 3.6A (Tc) 100W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 800V 3.6A (Tc) 100W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

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Single FETs, MOSFETs - IXTP4N80P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP4N80P-ND
Single FETs, MOSFETs IXTP4N80P-ND
N-Channel 800V 3.6A (Tc) 100W (Tc) Through Hole TO-220-3

N-Channel 800V 3.6A (Tc) 100W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1066202-IXTP4N80P - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1066202-IXTP4N80P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1066202-IXTP4N80P
Win Source Part Number: 1066202-IXTP4N80P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Polar Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 800 V Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V Vgs(th) (Max) @ Id: 5.5V @ 100µA Power Dissipation (Max): 100W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): STP5NK80Z; STP4NK80Z; FQP4N90C; STP4N80K5; FCP4N60; FDP5N60NZ; ECCN: EAR99 Fake Threat In the Open Market: 82 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTP4 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1066202-IXTP4N80P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Polar
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 800 V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Power Dissipation (Max): 100W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 14.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STP5NK80Z; STP4NK80Z; FQP4N90C; STP4N80K5; FCP4N60; FDP5N60NZ;
ECCN: EAR99
Fake Threat In the Open Market: 82 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTP4
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP4N80P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP4N80P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP4N80P
MOSFET N-CH 800V 3.6A TO220AB

MOSFET N-CH 800V 3.6A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 3.5 Amps 800V 3 Rds

MOSFET 3.5 Amps 800V 3 Rds

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP4N80P-ND 1066202-IXTP4N80P IXTP4N80P IXTP4N80P
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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