Win Source Part Number: 1066204-IXTP4N65X2
Category: Discrete Semiconductor Products>Transistors
Series: Ultra X2
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 2A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 80W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 455 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): STF9N65M2; STP9N65M2; IPA50R800CEXKSA2; STF8NM50N; IPA65R650CEXKSA1; IPA65R1K5CEXKSA1;
ECCN: EAR99
Fake Threat In the Open Market: 80 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTP4
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 650V 4A (Tc) 80W (Tc) Through Hole TO-220
MOSFET N-CH 650V 4A TO220
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 1066204-IXTP4N65X2 | 238-IXTP4N65X2-ND | IXTP4N65X2 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel | N-Channel |