Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXTP4N60P

Description
Win Source Part Number: 1066203-IXTP4N60P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: PolarHV™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5.5V @ 100µA Power Dissipation (Max): 89W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): FDPF5N60NZ; FDPF6N60ZUT; TK5A60D(STA4,Q,M); STP5NK60ZFP; FQPF5N60C; STP4NK60ZFP; ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1066203-IXTP4N60P - Win Source Electronics
    Win Source Electronics
  • Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP4N60P - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
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Description
Win Source Part Number: 1066203-IXTP4N60P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: PolarHV™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5.5V @ 100µA Power Dissipation (Max): 89W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): FDPF5N60NZ; FDPF6N60ZUT; TK5A60D(STA4,Q,M); STP5NK60ZFP; FQPF5N60C; STP4NK60ZFP; ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1066203-IXTP4N60P - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1066203-IXTP4N60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1066203-IXTP4N60P
Win Source Part Number: 1066203-IXTP4N60P Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: PolarHV™ Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 600 V Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V Vgs(th) (Max) @ Id: 5.5V @ 100µA Power Dissipation (Max): 89W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): FDPF5N60NZ; FDPF6N60ZUT; TK5A60D(STA4,Q,M); STP5NK60ZFP; FQPF5N60C; STP4NK60ZFP; ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Product Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1066203-IXTP4N60P
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: PolarHV™
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 600 V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2A, 10V
Vgs(th) (Max) @ Id: 5.5V @ 100µA
Power Dissipation (Max): 89W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): FDPF5N60NZ; FDPF6N60ZUT; TK5A60D(STA4,Q,M); STP5NK60ZFP; FQPF5N60C; STP4NK60ZFP;
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Product Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP4N60P - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP4N60P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP4N60P
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Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1066203-IXTP4N60P IXTP4N60P
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel
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