Manufacturer: IXYS
Win Source Part Number: 1049888-IXTP3N50D2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
FET Feature: Depletion Mode
Polarity: N-Channel
Power Dissipation (Max): 125W (Tc)
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 500V
Continuous Drain Current at 25°C: 3A (Tc)
Max Gate Charge: 40nC @ 5V
Max Input Capacitance: 1070pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 1.5 Ohm @ 1.5A, 0V
Popularity: Medium
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
N-Channel 500V 3A (Tc) 125W (Tc) Through Hole TO-220-3
MOSFET N-CH MOSFETS (D2) 500V 3A
MOSFET N-CH 500V 3A TO220AB
MOSFET N-CH 500V 3A TO220AB
| Win Source Electronics | DigiKey | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Utmel Electronic Limited | |
|---|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1049888-IXTP3N50D2 | IXTP3N50D2-ND | IXTP3N50D2 | IXTP3N50D2 | 401-IXTP3N50D2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP3N50D2 | Single FETs, MOSFETs | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET N-CH 500V 3A TO220AB |
| Polarity | N-Channel; N-Channel | N-Channel | |||
| MOSFET Operating Mode | Depletion | ||||
| V(BR)DSS | 500 volts | ||||
| PD | 125000 milliwatts | 125000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
