Littelfuse, Inc. Single FETs, MOSFETs IXTP3N120

Description
N-Channel 1200V 3A (Tc) 200W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 1200V 3A (Tc) 200W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - 238-IXTP3N120-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTP3N120-ND
Single FETs, MOSFETs 238-IXTP3N120-ND
N-Channel 1200V 3A (Tc) 200W (Tc) Through Hole TO-220-3

N-Channel 1200V 3A (Tc) 200W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP3N120 - 1049887-IXTP3N120 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP3N120
1049887-IXTP3N120
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP3N120 1049887-IXTP3N120
Manufacturer: IXYS Win Source Part Number: 1049887-IXTP3N120 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 1200V Continuous Drain Current at 25°C: 3A (Tc) Gate-Source Threshold Voltage: 5V @ 250μA Max Gate Charge: 42nC @ 10V Max Input Capacitance: 1350pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 4.5 Ohm @ 500mA, 10V Popularity: Medium Fake Threat In the Open Market: 42 pct. Supply and Demand Status: Balance Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 1049887-IXTP3N120
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 1200V
Continuous Drain Current at 25°C: 3A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 42nC @ 10V
Max Input Capacitance: 1350pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 4.5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 42 pct.
Supply and Demand Status: Balance
Quantity per package: 50

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET MOSFET Id3 BVdass1200

MOSFET MOSFET Id3 BVdass1200

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP3N120 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP3N120
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP3N120
MOSFET N-CH 1200V 3A TO220AB

MOSFET N-CH 1200V 3A TO220AB

Supplier's Site
Transistor - 38647233 - Radwell International
Willingboro, NJ, United States
Transistor
38647233
Transistor 38647233
MOSFET, N, TO-220, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:1.2KV, CONTINUOUS DRAIN CURRENT ID:3A, ON RESISTANCE RDS(ON):4.5OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:5V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

MOSFET, N, TO-220, TRANSISTOR POLARITY:N CHANNEL, DRAIN SOURCE VOLTAGE VDS:1.2KV, CONTINUOUS DRAIN CURRENT ID:3A, ON RESISTANCE RDS(ON):4.5OHM, TRANSISTOR MOUNTING:THROUGH HOLE, RDS(ON) TEST VOLTAGE VGS:10V, THRESHOLD VOLTAGE VGS:5V ROHS COMPLIANT: YES. FREE 2 YEAR RADWELL WARRANTY

Supplier's Site
Single FETs, MOSFETs - IXTP3N120 - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTP3N120
Single FETs, MOSFETs IXTP3N120
MOSFET N-CH 1200V 3A TO220AB

MOSFET N-CH 1200V 3A TO220AB

Supplier's Site Datasheet

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited Radwell International ODG (Origin Data Global)
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 238-IXTP3N120-ND 1049887-IXTP3N120 IXTP3N120 IXTP3N120 38647233 IXTP3N120
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP3N120 MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs Transistor Single FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3 TO-220; TO-220-3
V(BR)DSS 1200 volts 1200 volts
PD 200000 milliwatts 200000 milliwatts
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