Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP36P15P IXTP36P15P

Description
Manufacturer: IXYS Win Source Part Number: 1191284-IXTP36P15P Series: PolarP Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Family Name: IXTP36P15P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-220AB Channel Type Type: P Drain Source Voltage: 150V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3100pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): IRF6218; IRF6218PbF; Introduction Date: October 16, 2007 ECCN: EAR99 Country of Origin: United States of America Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
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Description
Manufacturer: IXYS Win Source Part Number: 1191284-IXTP36P15P Series: PolarP Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Family Name: IXTP36P15P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-220AB Channel Type Type: P Drain Source Voltage: 150V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3100pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): IRF6218; IRF6218PbF; Introduction Date: October 16, 2007 ECCN: EAR99 Country of Origin: United States of America Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP36P15P - 1191284-IXTP36P15P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP36P15P
1191284-IXTP36P15P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP36P15P 1191284-IXTP36P15P
Manufacturer: IXYS Win Source Part Number: 1191284-IXTP36P15P Series: PolarP Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 150°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Family Name: IXTP36P15P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-220AB Channel Type Type: P Drain Source Voltage: 150V Vgs(th) (Maximum) @ Id: 4.5V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 55nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 3100pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 18A, 10V Alternative Parts (Cross-Reference): IRF6218; IRF6218PbF; Introduction Date: October 16, 2007 ECCN: EAR99 Country of Origin: United States of America Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191284-IXTP36P15P
Series: PolarP
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 150°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Family Name: IXTP36P15P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-220AB
Channel Type Type: P
Drain Source Voltage: 150V
Vgs(th) (Maximum) @ Id: 4.5V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 55nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 3100pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 110 mOhm @ 18A, 10V
Alternative Parts (Cross-Reference): IRF6218; IRF6218PbF;
Introduction Date: October 16, 2007
ECCN: EAR99
Country of Origin: United States of America
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTP36P15P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTP36P15P-ND
Single FETs, MOSFETs 238-IXTP36P15P-ND
P-Channel 150V 36A (Tc) 300W (Tc) Through Hole TO-220-3

P-Channel 150V 36A (Tc) 300W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP36P15P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP36P15P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP36P15P
MOSFET P-CH 150V 36A TO220AB

MOSFET P-CH 150V 36A TO220AB

Supplier's Site
Single FETs, MOSFETs - IXTP36P15P - ODG (Origin Data Global)
Shenzhen, China
Single FETs, MOSFETs
IXTP36P15P
Single FETs, MOSFETs IXTP36P15P
MOSFET P-CH 150V 36A TO220AB

MOSFET P-CH 150V 36A TO220AB

Supplier's Site Datasheet
Sheung Wan, Hong Kong
MOSFET -36.0 Amps -150V 0.110 Rds

MOSFET -36.0 Amps -150V 0.110 Rds

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global) VAST STOCK CO., LIMITED
Product Category Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191284-IXTP36P15P 238-IXTP36P15P-ND IXTP36P15P IXTP36P15P IXTP36P15P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP36P15P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs Single FETs, MOSFETs MOSFET
Package Type TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3 TO-220; TO-220-3
Polarity P-Channel P-Channel; P-Channel
Packing Method Tube; Tube
Transistor Technology / Material MOSFET (Metal Oxide)
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