Zilog Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single IXTP34N65X2

Description
Manufacturer: IXYS Win Source Part Number: 1325258-IXTP34N65X2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 540W (Tc) Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-220-3 ECCN: EAR99 Fake Threat In the Open Market: 66 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXTP34 Drive Voltage (Max Rds On, Min Rds On): 10V
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Description
Manufacturer: IXYS Win Source Part Number: 1325258-IXTP34N65X2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 540W (Tc) Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-220-3 ECCN: EAR99 Fake Threat In the Open Market: 66 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXTP34 Drive Voltage (Max Rds On, Min Rds On): 10V
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Suppliers

Company
Product
Description
Supplier Links
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1325258-IXTP34N65X2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1325258-IXTP34N65X2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1325258-IXTP34N65X2
Manufacturer: IXYS Win Source Part Number: 1325258-IXTP34N65X2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 50 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 34A (Tc) Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 540W (Tc) Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-220-3 ECCN: EAR99 Fake Threat In the Open Market: 66 REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: IXTP34 Drive Voltage (Max Rds On, Min Rds On): 10V

Manufacturer: IXYS
Win Source Part Number: 1325258-IXTP34N65X2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 50
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 34A (Tc)
Rds On (Max) @ Id, Vgs: 96mOhm @ 17A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 540W (Tc)
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-220-3
ECCN: EAR99
Fake Threat In the Open Market: 66
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: IXTP34
Drive Voltage (Max Rds On, Min Rds On): 10V

Buy Now Datasheet
Single FETs, MOSFETs - IXTP34N65X2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP34N65X2-ND
Single FETs, MOSFETs IXTP34N65X2-ND
N-Channel 650V 34A (Tc) 540W (Tc) Through Hole TO-220-3

N-Channel 650V 34A (Tc) 540W (Tc) Through Hole TO-220-3

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP34N65X2 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP34N65X2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP34N65X2
MOSFET N-CH 650V 34A TO220AB

MOSFET N-CH 650V 34A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
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Technical Specifications

  Win Source Electronics DigiKey Acme Chip Technology Co., Limited VAST STOCK CO., LIMITED
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1325258-IXTP34N65X2 IXTP34N65X2-ND IXTP34N65X2 IXTP34N65X2
Product Name Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel
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