Manufacturer: IXYS
Win Source Part Number: 205711-IXTP32N20T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 200V
Continuous Drain Current at 25°C: 32A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 38nC @ 10V
Max Input Capacitance: 1760pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 72 mOhm @ 16A, 10V
Alternative Parts (Cross-Reference): FQP34N20; IRFB23N20D; STP30NF20;
Popularity: Medium
Fake Threat In the Open Market: 62 pct.
Supply and Demand Status: Limited
MOSFET N-CH 200V 32A TO220AB
| Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 205711-IXTP32N20T | IXTP32N20T | IXTP32N20T |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP32N20T | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | ||
| V(BR)DSS | 200 volts | ||
| PD | 200000 milliwatts |
