MOSFET N-CH 600V 2A TO220AB Product overview: IXTP2N60P from IXYS / Littelfuse is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 600V, 2A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 600V, 2A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-IXTP2N60P can be used for catalog matching and distributor lookup.
Manufacturer: IXYS
Win Source Part Number: 1049884-IXTP2N60P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 55W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 5V @ 250μA
Max Gate Charge: 7nC @ 10V
Max Input Capacitance: 240pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 5.1 Ohm @ 1A, 10V
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Quantity per package: 50
N-Channel 600V 2A (Tc) 55W (Tc) Through Hole TO-220-3
MOSFET N-CH 600V 2A TO220AB
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors |
| Product Number | 278-IXTP2N60P | 1049884-IXTP2N60P | IXTP2N60P-ND | IXTP2N60P |
| Product Name | 600V 2A MOSFET Transistor | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP2N60P | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| MOSFET Operating Mode | Enhancement | |||
| V(BR)DSS | 600 volts | 600 volts | ||
| PD | 56000 milliwatts | 55000 milliwatts | ||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |