N-Channel 1000V 2A (Tc) 86W (Tc) Through Hole TO-220-3
Manufacturer: IXYS
Win Source Part Number: 1049883-IXTP2N100P
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 86W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 1000V
Continuous Drain Current at 25°C: 2A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 100μA
Max Gate Charge: 24.3nC @ 10V
Max Input Capacitance: 655pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 7.5 Ohm @ 500mA, 10V
Popularity: Medium
Fake Threat In the Open Market: 72 pct.
Supply and Demand Status: Balance
Quantity per package: 50
MOSFET N-CH 1000V 2A TO220AB
TRANSISTOR, N-CHANNEL, 1000V, 2A, THROUGH HOLE, MOSFET, POLAR, TO-220-3 PACKAGE/CASE. FREE 2 YEAR RADWELL WARRANTY
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Shenzhen Shengyu Electronics Technology Limited | Radwell International | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors | RF Transistors |
| Product Number | 238-IXTP2N100P-ND | 1049883-IXTP2N100P | IXTP2N100P | IXTP2N100P | 206012627 |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP2N100P | MOSFET | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | Transistor |
| Polarity | N-Channel | N-Channel; N-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | ||
| V(BR)DSS | 1000 volts |
