Littelfuse, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP26P20P IXTP26P20P

Description
Manufacturer: IXYS Win Source Part Number: 1191282-IXTP26P20P Series: PolarP Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Family Name: IXTP26P20P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-220AB Channel Type Type: P Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2740pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 170 mOhm @ 13A, 10V Alternative Parts (Cross-Reference): IRHNA9260; JANSR2N7426U; JANSF2N7426U; Introduction Date: October 29, 2007 ECCN: EAR99 Country of Origin: United States of America Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
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Description
Manufacturer: IXYS Win Source Part Number: 1191282-IXTP26P20P Series: PolarP Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Family Name: IXTP26P20P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-220AB Channel Type Type: P Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2740pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 170 mOhm @ 13A, 10V Alternative Parts (Cross-Reference): IRHNA9260; JANSR2N7426U; JANSF2N7426U; Introduction Date: October 29, 2007 ECCN: EAR99 Country of Origin: United States of America Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP26P20P - 1191282-IXTP26P20P - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP26P20P
1191282-IXTP26P20P
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP26P20P 1191282-IXTP26P20P
Manufacturer: IXYS Win Source Part Number: 1191282-IXTP26P20P Series: PolarP Packaging: Tube Mounting Style: Through Hole Operating Temperature Range: -55°C ~ 175°C (TJ) Package: TO-220-3 Technology: MOSFET Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Family Name: IXTP26P20P Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Manufacturer Homepage: www.ixys.com Manufacturer Package: TO-220AB Channel Type Type: P Drain Source Voltage: 200V Vgs(th) (Maximum) @ Id: 4V @ 250μA Gate Charge (Qg) (Maximum) @ Vgs: 56nC @ 10V Input Capacitance (Ciss) (Maximum) @ Vds: 2740pF @ 25V Vgs (Maximum): ±20V Power Dissipation (Maximum): 300W (Tc) Rds On (Maximum) @ Id, Vgs: 170 mOhm @ 13A, 10V Alternative Parts (Cross-Reference): IRHNA9260; JANSR2N7426U; JANSF2N7426U; Introduction Date: October 29, 2007 ECCN: EAR99 Country of Origin: United States of America Estimated EOL Date: 2024 Popularity: Medium Fake Threat In the Open Market: 64 pct. Supply and Demand Status: Limited

Manufacturer: IXYS
Win Source Part Number: 1191282-IXTP26P20P
Series: PolarP
Packaging: Tube
Mounting Style: Through Hole
Operating Temperature Range: -55°C ~ 175°C (TJ)
Package: TO-220-3
Technology: MOSFET
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Family Name: IXTP26P20P
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Manufacturer Homepage: www.ixys.com
Manufacturer Package: TO-220AB
Channel Type Type: P
Drain Source Voltage: 200V
Vgs(th) (Maximum) @ Id: 4V @ 250μA
Gate Charge (Qg) (Maximum) @ Vgs: 56nC @ 10V
Input Capacitance (Ciss) (Maximum) @ Vds: 2740pF @ 25V
Vgs (Maximum): ±20V
Power Dissipation (Maximum): 300W (Tc)
Rds On (Maximum) @ Id, Vgs: 170 mOhm @ 13A, 10V
Alternative Parts (Cross-Reference): IRHNA9260; JANSR2N7426U; JANSF2N7426U;
Introduction Date: October 29, 2007
ECCN: EAR99
Country of Origin: United States of America
Estimated EOL Date: 2024
Popularity: Medium
Fake Threat In the Open Market: 64 pct.
Supply and Demand Status: Limited

Buy Now Datasheet
Single FETs, MOSFETs - 238-IXTP26P20P-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTP26P20P-ND
Single FETs, MOSFETs 238-IXTP26P20P-ND
P-Channel 200V 26A (Tc) 300W (Tc) Through Hole TO-220-3

P-Channel 200V 26A (Tc) 300W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP26P20P - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP26P20P
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP26P20P
MOSFET P-CH 200V 26A TO220AB

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Supplier's Site
Sheung Wan, Hong Kong
MOSFET -26.0 Amps -200V 0.170 Rds

MOSFET -26.0 Amps -200V 0.170 Rds

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Technical Specifications

  Win Source Electronics DigiKey Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Transistors RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number 1191282-IXTP26P20P 238-IXTP26P20P-ND IXTP26P20P IXTP26P20P
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP26P20P Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Package Type TO-220; SOT3 TO-220; TO-220-3 TO-220; TO-220-3
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