Win Source Part Number: 1133995-IXTP24N65X2M
Category: Discrete Semiconductor Products>Transistors
Series: Ultra X2
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 37W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220 Isolated Tab
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: -IXTP24N65X2M
Base Product Number: IXTP24
Drive Voltage (Max Rds On, Min Rds On): 10V
N-Channel 650V 24A (Tc) 37W (Tc) Through Hole TO-220 Isolated Tab
MOSFET N-CH 650V 24A TO220
MOSFET DISCMSFT NCHULTRAJNCTX2CLASS
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 1133995-IXTP24N65X2M | IXTP24N65X2M-ND | IXTP24N65X2M | IXTP24N65X2M |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel |
