Zilog Single FETs, MOSFETs IXTP24N65X2M

Description
N-Channel 650V 24A (Tc) 37W (Tc) Through Hole TO-220 Isolated Tab
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Description
N-Channel 650V 24A (Tc) 37W (Tc) Through Hole TO-220 Isolated Tab
Request a Quote Datasheet

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Single FETs, MOSFETs - IXTP24N65X2M-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP24N65X2M-ND
Single FETs, MOSFETs IXTP24N65X2M-ND
N-Channel 650V 24A (Tc) 37W (Tc) Through Hole TO-220 Isolated Tab

N-Channel 650V 24A (Tc) 37W (Tc) Through Hole TO-220 Isolated Tab

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1133995-IXTP24N65X2M - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1133995-IXTP24N65X2M
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1133995-IXTP24N65X2M
Win Source Part Number: 1133995-IXTP24N65X2M Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Ultra X2 Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 650 V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 37W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack, Isolated Tab Supplier Device Package: TO-220 Isolated Tab Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) ECCN: EAR99 Fake Threat In the Open Market: 46 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Other Names: -IXTP24N65X2M Base Product Number: IXTP24 Drive Voltage (Max Rds On, Min Rds On): 10V

Win Source Part Number: 1133995-IXTP24N65X2M
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Ultra X2
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 650 V
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 145mOhm @ 12A, 10V
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 37W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Supplier Device Package: TO-220 Isolated Tab
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2060 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
ECCN: EAR99
Fake Threat In the Open Market: 46 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Other Names: -IXTP24N65X2M
Base Product Number: IXTP24
Drive Voltage (Max Rds On, Min Rds On): 10V

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Sheung Wan, Hong Kong
MOSFET DISCMSFT NCHULTRAJNCTX2CLASS

MOSFET DISCMSFT NCHULTRAJNCTX2CLASS

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP24N65X2M - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP24N65X2M
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP24N65X2M
MOSFET N-CH 650V 24A TO220

MOSFET N-CH 650V 24A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTP24N65X2M-ND 1133995-IXTP24N65X2M IXTP24N65X2M IXTP24N65X2M
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
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