Win Source Part Number: 965546-IXTP1R6N50D2
Category: Discrete Semiconductor Products>Transistors
Series: Depletion
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IRFIBC20GPBF; FQPF2N50; FQPF2N60C; STF2HNK60Z; STF2LN60K3; FQP2P40-F080;
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTP1
N-Channel 500V 1.6A (Tc) 100W (Tc) Through Hole TO-220-3
MOSFET N-CH 500V 1.6A TO220AB
MOSFET N-CH MOSFETS (D2) 500V 1.6A
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 965546-IXTP1R6N50D2 | 238-IXTP1R6N50D2-ND | IXTP1R6N50D2 | IXTP1R6N50D2 |
| Product Name | Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel | N-Channel | ||
| MOSFET Operating Mode | Depletion | |||
| PD | 100000 milliwatts |
