Zilog Single FETs, MOSFETs IXTP1R6N50D2

Description
N-Channel 500V 1.6A (Tc) 100W (Tc) Through Hole TO-220-3
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Description
N-Channel 500V 1.6A (Tc) 100W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

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Single FETs, MOSFETs - 238-IXTP1R6N50D2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
238-IXTP1R6N50D2-ND
Single FETs, MOSFETs 238-IXTP1R6N50D2-ND
N-Channel 500V 1.6A (Tc) 100W (Tc) Through Hole TO-220-3

N-Channel 500V 1.6A (Tc) 100W (Tc) Through Hole TO-220-3

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 965546-IXTP1R6N50D2 - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
965546-IXTP1R6N50D2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 965546-IXTP1R6N50D2
Win Source Part Number: 965546-IXTP1R6N50D2 Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Series: Depletion Package: Tube Standard Package: 50 Technology: MOSFET (Metal Oxide) FET Type: N-Channel FET Feature: Depletion Mode Drain to Source Voltage (Vdss): 500 V Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc) Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V Power Dissipation (Max): 100W (Tc) Mounting Type: Through Hole Package / Case: TO-220-3 Supplier Device Package: TO-220-3 Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V Vgs (Max): ±20V Temperature Range - Operating: -55°C ~ 150°C (TJ) Alternative Parts (Cross-Reference): IRFIBC20GPBF; FQPF2N50; FQPF2N60C; STF2HNK60Z; STF2LN60K3; FQP2P40-F080; ECCN: EAR99 Fake Threat In the Open Market: 59 pct. MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Mfr: IXYS Base Product Number: IXTP1

Win Source Part Number: 965546-IXTP1R6N50D2
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: Depletion
Package: Tube
Standard Package: 50
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
FET Feature: Depletion Mode
Drain to Source Voltage (Vdss): 500 V
Current - Continuous Drain (Id) @ 25°C: 1.6A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 800mA, 0V
Power Dissipation (Max): 100W (Tc)
Mounting Type: Through Hole
Package / Case: TO-220-3
Supplier Device Package: TO-220-3
Gate Charge (Qg) (Max) @ Vgs: 23.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 25 V
Vgs (Max): ±20V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Alternative Parts (Cross-Reference): IRFIBC20GPBF; FQPF2N50; FQPF2N60C; STF2HNK60Z; STF2LN60K3; FQP2P40-F080;
ECCN: EAR99
Fake Threat In the Open Market: 59 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: IXYS
Base Product Number: IXTP1

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Sheung Wan, Hong Kong
MOSFET N-CH MOSFETS (D2) 500V 1.6A

MOSFET N-CH MOSFETS (D2) 500V 1.6A

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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP1R6N50D2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP1R6N50D2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP1R6N50D2
MOSFET N-CH 500V 1.6A TO220AB

MOSFET N-CH 500V 1.6A TO220AB

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 238-IXTP1R6N50D2-ND 965546-IXTP1R6N50D2 IXTP1R6N50D2 IXTP1R6N50D2
Product Name Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3 TO-220; TO-220-3
MOSFET Operating Mode Depletion
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