P-Channel 100V 18A (Tc) 83W (Tc) Through Hole TO-220-3
Manufacturer: IXYS
Win Source Part Number: 1049873-IXTP18P10T
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: P-Channel
Power Dissipation (Max): 83W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 100V
Continuous Drain Current at 25°C: 18A (Tc)
Gate-Source Threshold Voltage: 4.5V @ 250μA
Max Gate Charge: 39nC @ 10V
Max Input Capacitance: 2100pF @ 25V
Maximum Gate-Source Voltage: ±15V
Maximum Rds On at Id,Vgs: 120 mOhm @ 9A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
Quantity per package: 50
MOSFET P-CH 100V 18A TO-220
MOSFET P-CH 100V 18A TO220AB
| DigiKey | Win Source Electronics | VAST STOCK CO., LIMITED | Utmel Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Transistors | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | Metal-Oxide Semiconductor FET (MOSFET) | RF Transistors |
| Product Number | 238-IXTP18P10T-ND | 1049873-IXTP18P10T | IXTP18P10T | 401-IXTP18P10T | IXTP18P10T |
| Product Name | Single FETs, MOSFETs | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP18P10T | MOSFET | MOSFET P-CH 100V 18A TO-220 | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | P-Channel | P-Channel; P-Channel | |||
| Package Type | TO-220; TO-220-3 | TO-220; SOT3; TO-220AB | TO-220; TO-220-3 | ||
| V(BR)DSS | 100 volts | 100 volts | |||
| PD | 83000 milliwatts | 83000 milliwatts | |||
| TJ | -55 to 150 C (-67 to 302 F) | -55 to 150 C (-67 to 302 F) |
