Zilog Single FETs, MOSFETs IXTP170N075T2

Description
N-Channel 75V 170A (Tc) 360W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 75V 170A (Tc) 360W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXTP170N075T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP170N075T2-ND
Single FETs, MOSFETs IXTP170N075T2-ND
N-Channel 75V 170A (Tc) 360W (Tc) Through Hole TO-220-3

N-Channel 75V 170A (Tc) 360W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP170N075T2 - 1049869-IXTP170N075T2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP170N075T2
1049869-IXTP170N075T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP170N075T2 1049869-IXTP170N075T2
Manufacturer: IXYS Win Source Part Number: 1049869-IXTP170N075T 2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 360W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 75V Continuous Drain Current at 25°C: 170A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 109nC @ 10V Max Input Capacitance: 6860pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.4 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 44 pct. Supply and Demand Status: Sufficient

Manufacturer: IXYS
Win Source Part Number: 1049869-IXTP170N075T2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 360W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 75V
Continuous Drain Current at 25°C: 170A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 109nC @ 10V
Max Input Capacitance: 6860pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.4 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 44 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP170N075T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP170N075T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP170N075T2
MOSFET N-CH 75V 170A TO220AB

MOSFET N-CH 75V 170A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 170 Amps 75V

MOSFET 170 Amps 75V

Buy Now

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP170N075T2-ND 1049869-IXTP170N075T2 IXTP170N075T2 IXTP170N075T2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP170N075T2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB TO-220; TO-220-3
V(BR)DSS 75 volts
Unlock Full Specs
to access all available technical data