Zilog Single FETs, MOSFETs IXTP14N60PM

Description
N-Channel 600V 7A (Tc) 75W (Tc) Through Hole TO-220 Isolated Tab
Request a Quote Datasheet
Description
N-Channel 600V 7A (Tc) 75W (Tc) Through Hole TO-220 Isolated Tab
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - IXTP14N60PM-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP14N60PM-ND
Single FETs, MOSFETs IXTP14N60PM-ND
N-Channel 600V 7A (Tc) 75W (Tc) Through Hole TO-220 Isolated Tab

N-Channel 600V 7A (Tc) 75W (Tc) Through Hole TO-220 Isolated Tab

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP14N60PM - 1049865-IXTP14N60PM - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP14N60PM
1049865-IXTP14N60PM
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP14N60PM 1049865-IXTP14N60PM
Manufacturer: IXYS Win Source Part Number: 1049865-IXTP14N60PM Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 75W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 150°C (TJ) Case / Package: TO-220 Isolated Tab Dimension: TO-220-3 Isolated Tab Drain-Source Breakdown Voltage: 600V Continuous Drain Current at 25°C: 7A (Tc) Gate-Source Threshold Voltage: 5.5V @ 250μA Max Gate Charge: 36nC @ 10V Max Input Capacitance: 2500pF @ 25V Maximum Gate-Source Voltage: ±30V Maximum Rds On at Id,Vgs: 550 mOhm @ 7A, 10V Popularity: Medium Fake Threat In the Open Market: 60 pct. Supply and Demand Status: Balance

Manufacturer: IXYS
Win Source Part Number: 1049865-IXTP14N60PM
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 75W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 150°C (TJ)
Case / Package: TO-220 Isolated Tab
Dimension: TO-220-3 Isolated Tab
Drain-Source Breakdown Voltage: 600V
Continuous Drain Current at 25°C: 7A (Tc)
Gate-Source Threshold Voltage: 5.5V @ 250μA
Max Gate Charge: 36nC @ 10V
Max Input Capacitance: 2500pF @ 25V
Maximum Gate-Source Voltage: ±30V
Maximum Rds On at Id,Vgs: 550 mOhm @ 7A, 10V
Popularity: Medium
Fake Threat In the Open Market: 60 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP14N60PM - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP14N60PM
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP14N60PM
MOSFET N-CH 600V 7A TO220

MOSFET N-CH 600V 7A TO220

Supplier's Site

Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number IXTP14N60PM-ND 1049865-IXTP14N60PM IXTP14N60PM
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP14N60PM Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 Full Pack, Isolated Tab TO-220; SOT3; TO-220 Isolated Tab TO-220; TO-220-3 Full Pack, Isolated Tab
V(BR)DSS 600 volts
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