Zilog Single FETs, MOSFETs IXTP140N055T2

Description
N-Channel 55V 140A (Tc) 250W (Tc) Through Hole TO-220-3
Request a Quote Datasheet
Description
N-Channel 55V 140A (Tc) 250W (Tc) Through Hole TO-220-3
Request a Quote Datasheet

Suppliers

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Product
Description
Supplier Links
Single FETs, MOSFETs - IXTP140N055T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP140N055T2-ND
Single FETs, MOSFETs IXTP140N055T2-ND
N-Channel 55V 140A (Tc) 250W (Tc) Through Hole TO-220-3

N-Channel 55V 140A (Tc) 250W (Tc) Through Hole TO-220-3

Buy Now Datasheet
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP140N055T2 - 1049863-IXTP140N055T2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP140N055T2
1049863-IXTP140N055T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP140N055T2 1049863-IXTP140N055T2
Manufacturer: IXYS Win Source Part Number: 1049863-IXTP140N055T 2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 250W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 55V Continuous Drain Current at 25°C: 140A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 82nC @ 10V Max Input Capacitance: 4760pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 5.4 mOhm @ 50A, 10V Popularity: Medium Fake Threat In the Open Market: 49 pct. Supply and Demand Status: Sufficient Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 1049863-IXTP140N055T2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 250W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 140A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 82nC @ 10V
Max Input Capacitance: 4760pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 5.4 mOhm @ 50A, 10V
Popularity: Medium
Fake Threat In the Open Market: 49 pct.
Supply and Demand Status: Sufficient
Quantity per package: 50

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP140N055T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP140N055T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP140N055T2
MOSFET N-CH 55V 140A TO220AB

MOSFET N-CH 55V 140A TO220AB

Supplier's Site
Sheung Wan, Hong Kong
MOSFET 140 Amps 0V

MOSFET 140 Amps 0V

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Technical Specifications

  DigiKey Win Source Electronics Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors Metal-Oxide Semiconductor FET (MOSFET)
Product Number IXTP140N055T2-ND 1049863-IXTP140N055T2 IXTP140N055T2 IXTP140N055T2
Product Name Single FETs, MOSFETs TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP140N055T2 Discrete Semiconductor Products - Transistors - FETs, MOSFETs MOSFET
Polarity N-Channel N-Channel; N-Channel
Package Type TO-220; TO-220-3 TO-220; SOT3; TO-220AB 4760 pF @ 25 V
V(BR)DSS 55 volts
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