Zilog TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP120N04T2 IXTP120N04T2

Description
Manufacturer: IXYS Win Source Part Number: 1049859-IXTP120N04T2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 3240pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.1 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Quantity per package: 50
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Description
Manufacturer: IXYS Win Source Part Number: 1049859-IXTP120N04T2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 3240pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.1 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Quantity per package: 50
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Suppliers

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TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP120N04T2 - 1049859-IXTP120N04T2 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP120N04T2
1049859-IXTP120N04T2
TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP120N04T2 1049859-IXTP120N04T2
Manufacturer: IXYS Win Source Part Number: 1049859-IXTP120N04T2 Packaging: Tube/Rail Mounting: Through Hole Technology: MOSFET Polarity: N-Channel Power Dissipation (Max): 200W (Tc) Categories: Discrete Semiconductor Products Drive Voltage (Max Rds On, Min Rds On): 10V Status: Active Temperature Range - Operating: -55°C to 175°C (TJ) Case / Package: TO-220AB Dimension: TO-220-3 Drain-Source Breakdown Voltage: 40V Continuous Drain Current at 25°C: 120A (Tc) Gate-Source Threshold Voltage: 4V @ 250μA Max Gate Charge: 58nC @ 10V Max Input Capacitance: 3240pF @ 25V Maximum Gate-Source Voltage: ±20V Maximum Rds On at Id,Vgs: 6.1 mOhm @ 25A, 10V Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Sufficient Quantity per package: 50

Manufacturer: IXYS
Win Source Part Number: 1049859-IXTP120N04T2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 200W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 40V
Continuous Drain Current at 25°C: 120A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 58nC @ 10V
Max Input Capacitance: 3240pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.1 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Sufficient
Quantity per package: 50

Buy Now Datasheet
Single FETs, MOSFETs - IXTP120N04T2-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
IXTP120N04T2-ND
Single FETs, MOSFETs IXTP120N04T2-ND
N-Channel 40V 120A (Tc) 200W (Tc) Through Hole TO-220-3

N-Channel 40V 120A (Tc) 200W (Tc) Through Hole TO-220-3

Buy Now Datasheet
Sheung Wan, Hong Kong
MOSFET 120 Amps 40V

MOSFET 120 Amps 40V

Buy Now
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - IXTP120N04T2 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
IXTP120N04T2
Discrete Semiconductor Products - Transistors - FETs, MOSFETs IXTP120N04T2
MOSFET N-CH 40V 120A TO220AB

MOSFET N-CH 40V 120A TO220AB

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Technical Specifications

  Win Source Electronics DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number 1049859-IXTP120N04T2 IXTP120N04T2-ND IXTP120N04T2 IXTP120N04T2
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP120N04T2 Single FETs, MOSFETs MOSFET Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel; N-Channel N-Channel
V(BR)DSS 40 volts
PD 200000 milliwatts
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