Manufacturer: IXYS
Win Source Part Number: 040917-IXTP110N055T2
Packaging: Tube/Rail
Mounting: Through Hole
Technology: MOSFET
Polarity: N-Channel
Power Dissipation (Max): 180W (Tc)
Categories: Discrete Semiconductor Products
Drive Voltage (Max Rds On, Min Rds On): 10V
Status: Active
Temperature Range - Operating: -55°C to 175°C (TJ)
Case / Package: TO-220AB
Dimension: TO-220-3
Drain-Source Breakdown Voltage: 55V
Continuous Drain Current at 25°C: 110A (Tc)
Gate-Source Threshold Voltage: 4V @ 250μA
Max Gate Charge: 57nC @ 10V
Max Input Capacitance: 3060pF @ 25V
Maximum Gate-Source Voltage: ±20V
Maximum Rds On at Id,Vgs: 6.6 mOhm @ 25A, 10V
Popularity: Medium
Fake Threat In the Open Market: 58 pct.
Supply and Demand Status: Limited
Application Field: Used in Automotive, Power Management
Quantity per package: 50
N-Channel 55V 110A (Tc) 180W (Tc) Through Hole TO-220-3
MOSFET N-CH 55V 110A TO220AB
| Win Source Electronics | DigiKey | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|
| Product Category | Metal-Oxide Semiconductor FET (MOSFET) | Transistors | RF Transistors | Metal-Oxide Semiconductor FET (MOSFET) |
| Product Number | 040917-IXTP110N055T2 | IXTP110N055T2-ND | IXTP110N055T2 | IXTP110N055T2 |
| Product Name | TRANSISTORS - Transistors - FETs, MOSFETs - RF - IXTP110N055T2 | Single FETs, MOSFETs | Discrete Semiconductor Products - Transistors - FETs, MOSFETs | MOSFET |
| Polarity | N-Channel; N-Channel | N-Channel | ||
| V(BR)DSS | 55 volts | |||
| PD | 180000 milliwatts |
